CMOS Replica Transistor Feedback for ON Current Stability

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Solution Overview

Problem

As semiconductor devices miniaturize and voltage levels decrease, variations in threshold voltages of transistors increase, leading to larger fluctuations in ON current, which affect standby current and are difficult to manage, especially due to temperature changes.

Innovation Solution

A method and semiconductor device that utilize replica transistors and control circuits to maintain ON and OFF current values at target levels by adjusting power-supply and substrate voltages, using diode-connected replica transistors and feedback mechanisms to stabilize current flows in CMOS circuits.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If miniaturization and voltage lowering are implemented, then device integration and power efficiency are improved, but transistor threshold voltage variations increase causing ON current fluctuations

Engineering Contradiction:
Improvepower efficiencyVSAvoidON current stability
Core Design Contradiction:
Use of energy by moving objectVSReliability

Solution Approach 1:

The patent implements a feedback mechanism where a replica transistor mirrors the characteristics of the actual transistor, and the measured current from the replica is fed back through an amplifier to adjust the gate voltage of the actual transistor, compensating for threshold voltage variations and stabilizing ON current

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent uses a replica transistor that copies the electrical characteristics of the actual transistor to sense and measure current variations. This replica serves as a model to predict and compensate for threshold voltage fluctuations in the main transistor without directly affecting its operation

Inventive Principle:
Principle #26Copying

2Productivity

If miniaturization is implemented, then device density is improved, but threshold voltage variations among transistors increase

Engineering Contradiction:
Improvedevice densityVSAvoidthreshold voltage uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies local compensation by providing individual feedback control to each transistor or transistor group through dedicated replica transistors and amplifiers, allowing threshold voltage variations to be corrected locally rather than requiring global uniformity across the entire chip

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent dynamically adjusts the gate voltage parameter of the actual transistor based on measured current variations from the replica transistor, compensating for manufacturing variations by changing the operating parameters rather than relying on precise manufacturing control

Inventive Principle:
Principle #35Parameter changes

3Speed

If threshold voltage is lowered to improve speed, then switching speed is improved, but OFF current increases affecting standby current

Engineering Contradiction:
Improveswitching speedVSAvoidstandby current
Core Design Contradiction:
SpeedVSLoss of energy

Solution Approach 1:

The patent dynamically adjusts transistor operating conditions using feedback control, allowing the system to optimize between speed and power consumption based on actual operating conditions rather than using fixed threshold voltages, enabling low threshold voltage for speed when needed while maintaining acceptable standby current

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS9081402B2Semiconductor device having a complementary field effect transistor
Publication Date: 2015.07.14 LONGITUDE LICENSING LTD
  • US9081402B2 patent drawing
  • US9081402B2 patent drawing
  • US9081402B2 patent drawing

AI summary

A method for controlling power supply current in a CMOS circuit, the method including applying a first predetermined voltage to a diode connected n-channel replica transistor, the n-channel replica transistor operating in weak inversion, applying a first substrate voltage to the substrate of the n-channel replica transistor so that the current flowing in the n-channel replica transistor equals a first predetermined target current, and applying the first substrate voltage to substrates of n-channel transistors in the CMOS circuit.