CMOS Storage Resistor Phase Transition for Radiation Tolerance

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Solution Overview

Problem

Conventional radiation tolerant integrated circuits suffer from performance penalties due to design features that make them slow, as the methods used to protect against soft-errors caused by ionizing radiation also degrade circuit performance.

Innovation Solution

A circuit with a charge storage node connected to a resistor made of material that can reversibly change between amorphous and crystalline states, with heat application controlling resistance, allowing the circuit to switch between high and low resistance states based on radiation detection to balance radiation tolerance and performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional radiation tolerant design features are used, then radiation tolerance is improved, but circuit performance deteriorates

Engineering Contradiction:
Improveradiation toleranceVSAvoidcircuit performance
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent applies dynamics by making the resistance value changeable over time through phase transitions. The resistor material transitions between crystalline (low resistance) and amorphous (high resistance) states dynamically in response to radiation detection, allowing the circuit to adapt its performance characteristics rather than being fixed in a static state

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the physical state parameter of the resistor material between crystalline and amorphous phases. This parameter change directly controls the resistance value, enabling the circuit to switch between performance modes - high performance (crystalline) and radiation tolerant (amorphous) - by modifying the material's physical state

Inventive Principle:
Principle #35Parameter changes

2Reliability

If resistance is increased to improve radiation tolerance, then radiation tolerance is improved, but circuit speed deteriorates

Engineering Contradiction:
Improveradiation toleranceVSAvoidcircuit speed
Core Design Contradiction:
ReliabilityVSSpeed

Solution Approach 1:

The patent employs periodic action by repeatedly transitioning the resistor between crystalline and amorphous states based on radiation detection. The system monitors for radiation events and periodically switches the resistance state - maintaining high resistance (amorphous) during radiation events for tolerance, then switching to low resistance (crystalline) for speed when radiation is absent

Inventive Principle:
Principle #19Periodic action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach minimizes circuit performance degradation while maintaining radiation tolerance by adjusting resistance dynamically in response to radiation events, allowing the circuit to operate faster when radiation is low and more tolerant when it is high.

Implementation Method 1

the material reversibly convertible between the amorphous state and the crystalline state by application of heat

Methodology Applied
Scientific EffectPhase transition: Phase Change

Implementation Method 2

means for applying sufficient heat to the resistor to (i) change the amorphous state of the resistor to the crystalline state and to (ii) change the crystalline state of the resistor to the amorphous state

Methodology Applied
Scientific EffectThermal heating: Heating

Data Source

PatentUS7719887B2CMOS storage devices configurable in high performance mode or radiation tolerant mode
Publication Date: 2010.05.18 X CORP
  • US7719887B2 patent drawing
  • US7719887B2 patent drawing
  • US7719887B2 patent drawing

AI summary

A radiation tolerant circuit, structure of the circuit and method of autonomic radiation event device protection. The circuit includes a charge storage node connected to a resistor, the resistor comprising a material having an amorphous state and a crystalline state, the amorphous state having a higher resistance than the crystalline state, the material reversibly convertible between the amorphous state and the crystalline state by application of heat; an optional resistive heating element proximate to the resistor; and means for writing data to the charge storage node and means for reading data from the charge storage node.