CMOS Sensor Interconnect Structure With Dielectric Patterns
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Solution Overview
Problem
Current CMOS image sensor manufacturing techniques face challenges in achieving higher resolution and lower power consumption while maintaining miniaturization and integration, particularly in forming efficient image sensing and phase detection units with optimal dielectric and conductive structures.
Innovation Solution
The method involves forming a semiconductor substrate with a pixel region and a circuit region, using ion implantation to create p-n junctions for image sensing and phase detection, and employing a dielectric pattern and interconnect structure with a bonding pad and dummy pattern to enhance electrical connectivity and prevent peeling, while using low k dielectric materials and multi-layer interconnects for efficient signal processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If ion implantation is used to create p-n junctions for image sensing and phase detection, then image sensing resolution and phase detection capability are improved, but manufacturing complexity and process difficulty increase
Solution Approach 1:
The patent divides the semiconductor substrate into distinct pixel regions and circuit regions, with further segmentation into specific functional areas for image sensing and phase detection. This segmentation allows ion implantation to be targeted at specific regions, improving resolution while managing manufacturing complexity through localized processing.
Solution Approach 2:
The patent employs local quality by creating different doped regions with specific electrical properties in different areas of the substrate. Ion implantation is applied selectively to create p-type and n-type regions with optimized characteristics for their specific functions, enabling high-resolution sensing while simplifying the overall manufacturing process through region-specific optimization.
2Productivity
If multi-layer interconnects and bonding pads are used to enhance electrical connectivity, then signal processing efficiency is improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent transitions from planar interconnect structures to three-dimensional multi-layer interconnect architectures. Bonding pads are formed at different levels and positions, with interconnect structures extending through multiple dielectric layers, enabling enhanced electrical connectivity and signal processing efficiency while managing complexity through vertical integration.
Solution Approach 2:
The patent implements nested interconnect structures where conductive elements are embedded within dielectric layers, which are themselves embedded within the semiconductor device structure. Bonding pads are nested within the multi-layer architecture, allowing complex electrical connectivity to be achieved through hierarchical nesting rather than superficial complexity.
3Loss of energy
If low k dielectric materials are used to reduce power consumption, then energy efficiency is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent changes the dielectric material parameter by using low k materials with optimized dielectric constants. This parameter change reduces power consumption through lower leakage current while the patent manages manufacturing precision requirements through careful process optimization and quality control in dielectric layer formation.
Solution Approach 2:
The patent employs composite dielectric structures combining low k materials with other functional materials to achieve both low power consumption and manufacturability. The composite structure allows optimization of electrical properties for energy efficiency while maintaining mechanical properties that facilitate precise manufacturing.
4Reliability
If dummy patterns are added to prevent peeling, then structural reliability is improved, but device complexity and manufacturing steps increase
Solution Approach 1:
The patent applies preliminary action by forming dummy patterns during the manufacturing process to prevent peeling issues before they occur. These dummy structures are strategically placed to provide mechanical support and stress distribution, ensuring structural reliability while integrating into the existing manufacturing workflow.
Solution Approach 2:
The patent uses dummy patterns as temporary structural elements that serve their protective function during device operation and manufacturing, then can be removed or are designed to be non-intrusive. These disposable-like structures provide necessary mechanical support without creating permanent complexity in the final device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of high-resolution CMOS sensors with reduced power consumption by optimizing the dielectric and conductive structures, improving signal processing efficiency and preventing peeling issues, thus advancing the miniaturization and integration of image sensors.
Implementation Method 1
using ion implantation to create p-n junctions for image sensing and phase detection
Data Source
AI summary
A semiconductor device includes a substrate, a dielectric layer, a plurality of dielectric patterns and a conductive pad. The substrate includes a first surface and a second surface opposite to the first surface. The dielectric layer is disposed at the first surface of the substrate, and the substrate is disposed between the dielectric layer and the second surface of the substrate. The dielectric patterns are disposed on the dielectric layer and between the first surface and the second surface of the substrate. The conductive pad is inserted between the plurality of dielectric patterns and extended into the dielectric layer.