CMOS RF Switch Topology With Resonant Inductor for Isolation
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Solution Overview
Problem
Current RF platforms in wireless devices rely on discrete devices for antenna interfacing, which limits their size and cost effectiveness, necessitating improved circuit designs for enhanced performance.
Innovation Solution
The implementation of CMOS RF switches with a floating body and remote body contacts, integrated on a single chip with transceivers, offering lower insertion loss and increased power handling capabilities, while maintaining a compact form factor and common processing technology with the transceiver.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If discrete devices are used to interface antennas with transceivers, then device functionality is achieved, but device size and cost increase
Solution Approach 1:
The patent combines the RF switch and transceiver into a single integrated circuit device, eliminating the need for separate discrete devices. The RF switch is formed within the same semiconductor substrate as the transceiver, with control circuits integrated alongside the transceiver components, achieving functional integration that reduces overall device size and eliminates the complexity of interfacing multiple discrete components.
2Loss of energy
If traditional RF switches are used, then antenna interfacing is achieved, but insertion loss and power handling are limited
Solution Approach 1:
The patent changes the electrical parameters of the RF switch by integrating it with the transceiver on the same substrate, allowing optimized transistor sizing, biasing, and material selection. The integrated design enables the RF switch to operate with lower insertion loss and higher power handling capability compared to traditional discrete RF switches, as the switch transistors can be directly coupled to the transceiver circuits without external connections.
3Ease of manufacture
If discrete RF switches are used, then antenna switching is achieved, but manufacturing cost increases
Solution Approach 1:
The patent merges the RF switch and transceiver into a single integrated circuit, allowing both components to be manufactured in the same semiconductor fabrication process. This integration eliminates the need for separate manufacturing steps, assembly operations, and testing procedures for discrete RF switches, thereby reducing overall manufacturing cost despite the increased complexity of the integrated design.
Data Source
AI summary
A wireless device includes high-performance CMOS RF switches that include serially connected transistors coupled between an input terminal and an output terminal, with an inductor coupled from the input to the output that resonates out the capacitance of the transistors to improve isolation. The transistors have a floating/bootstrapped body with remote body contacts.