Semiconductor Surface Treatment for CMP Abrasive Residue Removal
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Solution Overview
Problem
Existing surface treatment methods for semiconductor substrates after Chemical Mechanical Polishing (CMP) are inadequate in removing residues containing inorganic oxide abrasive grains, leading to performance deterioration in semiconductor devices.
Innovation Solution
A surface treatment method using a composition containing a zeta potential adjusting agent with an sp value of 9 to 11 and a negatively charged functional group, along with a dispersing medium, to negatively control the zeta potential of silicon oxide and inorganic oxide abrasive grains to -30 mV or less.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional surface treatment compositions are used, then the substrate surface can be cleaned, but inorganic oxide abrasive grain residues cannot be sufficiently removed
Solution Approach 1:
The invention changes the chemical composition parameters of the surface treatment composition by incorporating specific organic acids (oxalic acid, malonic acid, succinic acid, or maleic acid) at controlled concentrations (0.1-10 wt%), along with chelating agents and surfactants, to optimize the removal of inorganic oxide abrasive grains while preventing their adhesion to the silicon oxide surface
Solution Approach 2:
The invention uses chelating agents (EDTA, DTPA, NTA, or GLDA) as intermediary substances that bind to metal ions and facilitate the detachment of abrasive grain residues from the substrate surface, while organic acids provide the chemical environment necessary for effective residue removal without damaging the substrate
2Shape
If polishing composition is used for CMP, then the substrate surface can be flattened, but a large amount of foreign substances including abrasive grains remain on the surface
Solution Approach 1:
The invention converts the harmful effect of abrasive grain adhesion into a beneficial removal process by using organic acids to create a chemical environment that prevents abrasive grains from strongly adhering to the substrate, allowing them to be easily removed during the surface treatment step while maintaining the flattened surface morphology
Solution Approach 2:
The invention extracts and removes foreign substances including abrasive grains, metal particles, and organic residues from the substrate surface through a combination of chemical dissolution by organic acids, chelation by complexing agents, and surfactant action, leaving a clean surface suitable for subsequent semiconductor manufacturing steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces residues containing inorganic oxide abrasive grains on semiconductor substrates, improving the performance and reliability of semiconductor devices.
Implementation Method 1
negatively controlling a zeta potential of the silicon oxide and controlling a zeta potential of the inorganic oxide abrasive grains to −30 mV or less
Data Source
AI summary
The present invention provides a unit that can sufficiently remove a residue containing inorganic oxide abrasive grains present on the surface of a polished object to be polished containing silicon oxide. One aspect of the present invention relates to a surface treatment method for reducing a residue containing inorganic oxide abrasive grains on a surface of a polished object to be polished containing silicon oxide using a composition for surface treatment, wherein the composition for surface treatment contains a zeta potential adjusting agent having an sp value of more than 9 and 11 or less and having a negatively charged functional group and a dispersing medium, and the surface treatment method includes negatively controlling a zeta potential of the silicon oxide and controlling a zeta potential of the inorganic oxide abrasive grains to −30 mV or less using the surface treatment composition.