CMP Cleaning Solution Using Cyclodextrins to Remove Inhibitors
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Solution Overview
Problem
The semiconductor industry faces challenges in cleaning semiconductor devices, particularly after chemical mechanical polishing (CMP) processes, where residual inhibitor molecules can affect wettability, cleanability, and adhesion of subsequent layers, leading to issues like metal corrosion and recessing of contacts.
Innovation Solution
A CMP cleaning solution incorporating chelator molecules and carrier molecules, such as cyclodextrins, is applied to remove inhibitor molecules from the surface, forming host-guest complexes that prevent re-attachment and reduce the need for toxic amines, followed by rinsing and drying with deionized water and isopropyl alcohol, respectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional CMP cleaning processes are used, then the cleaning process is simple, but residual inhibitor molecules remain on the surface causing poor wettability, cleanability, and adhesion
Solution Approach 1:
The cleaning solution is segmented into multiple functional components: chelator molecules for removing metal ions, carrier molecules (cyclodextrins) for encapsulating inhibitor molecules, and surfactants for reducing surface tension. This segmentation allows each component to target specific contaminants independently, achieving comprehensive cleaning while maintaining manageable solution complexity
Solution Approach 2:
Carrier molecules act as intermediaries that form host-guest complexes with inhibitor molecules. The cyclodextrin carrier molecules encapsulate the hydrophobic inhibitor molecules through their hydrophobic cavities, facilitating their removal from the surface without requiring direct contact between the inhibitor and the cleaning solution bulk phase
2Reliability
If toxic amine-based cleaners are used, then cleaning effectiveness is high, but environmental sustainability and safety are compromised
Solution Approach 1:
The patent converts the typically harmful role of amines into a beneficial one by using amine-functionalized cyclodextrins. The amine group, which would normally be toxic and corrosive, is instead used to provide the cyclodextrin with metal-chelating capability and enhanced surface activity, creating a non-toxic cleaning agent that maintains high cleaning effectiveness
Solution Approach 2:
The cleaning mechanism is changed from direct chemical attack by toxic amines to physical encapsulation by cyclodextrin host molecules. This parameter change in the cleaning mechanism allows removal of inhibitors through host-guest complexation rather than chemical reaction, eliminating toxicity while preserving cleaning effectiveness
3Reliability
If minimal cleaning is applied, then process time is short, but metal corrosion and contact recessing occur
Solution Approach 1:
The cleaning solution incorporates oxidizing agents that accelerate the removal of organic inhibitor molecules and metal contaminants through oxidation reactions. This allows thorough cleaning and corrosion prevention to be achieved in reduced time compared to conventional non-oxidizing cleaners
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively cleans the semiconductor surface, preventing metal corrosion and ensuring proper adhesion of subsequent layers by removing residual inhibitors and reducing the use of toxic compounds, thereby improving the reliability and environmental sustainability of the CMP process.
Implementation Method 1
The cleaning solution includes a chelator and may include a plurality of carrier molecules
Implementation Method 2
forming host-guest complexes that prevent re-attachment
Data Source
AI summary
A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.