CMP Cleaning Composition for Inhibitor Residue Removal
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Solution Overview
Problem
The integration of semiconductor devices with reduced minimum feature sizes poses challenges in the semiconductor industry, particularly in the removal of residues and inhibitors left after chemical mechanical polishing (CMP) processes, which can affect the wettability, cleanability, and adhesion of subsequent processing steps.
Innovation Solution
A CMP cleaning solution is applied to remove inhibitor molecules and residues from the CMP process, utilizing a cleaning solution comprising chelator molecules, carrier molecules, and a surfactant to enhance the cleaning efficiency and prevent re-attachment of inhibitor molecules.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional cleaning methods are used after CMP process, then the cleaning process is simple, but residues and inhibitor molecules remain on the semiconductor surface affecting wettability and adhesion
Solution Approach 1:
The cleaning solution is segmented into multiple functional components: chelator molecules for removing inhibitor molecules, carrier molecules for solubilizing and transporting residues, and surfactants for reducing surface tension. This segmentation allows each component to target specific contaminants while working synergistically, improving cleaning effectiveness without requiring a single overly complex substance.
Solution Approach 2:
Carrier molecules act as intermediaries between the chelator molecules and the inhibitor residues. The carrier molecules first bind to the inhibitor molecules, then present them to the chelator molecules for removal. This intermediary mechanism enables effective removal of stubborn residues that would be difficult to eliminate directly, thereby improving wettability and adhesion.
2Shape
If CMP process is performed to planarize semiconductor surfaces, then surface flatness is improved, but inhibitor molecules and residues are deposited on the surface
Solution Approach 1:
The cleaning solution converts the harmful effect of inhibitor molecules (which reduce wettability and adhesion) into a beneficial removal process. The chelator molecules specifically target and bind to the inhibitor molecules deposited during CMP, transforming them from harmful contaminants into removable complexes that can be easily washed away, thereby eliminating the harmful effects while preserving the surface flatness achieved by CMP.
Solution Approach 2:
The cleaning solution changes the chemical parameters of the surface by introducing chelator molecules that alter the binding characteristics of inhibitor molecules. This parameter change enables the inhibitor molecules to be detached from the surface and solubilized by carrier molecules, effectively removing the contamination while maintaining the surface geometry improved by CMP.
3Productivity
If feature sizes are reduced to increase integration density, then more components can be integrated, but cleaning challenges increase due to smaller tolerances
Solution Approach 1:
The cleaning mechanism is substituted from purely mechanical removal (scrubbing, rinsing) to a chemical-based system. Chelator molecules chemically bind to inhibitor molecules, and carrier molecules solubilize the complexes, enabling removal of contaminants at the molecular level. This chemical substitution allows effective cleaning at reduced feature sizes where mechanical methods would cause damage or be insufficient.
Solution Approach 2:
The cleaning solution is a composite formulation combining multiple types of molecules with complementary functions: chelators for binding, carriers for solubilizing, and surfactants for wetting. This composite approach creates a synergistic effect that enhances cleaning capability at small feature sizes, where individual components would be insufficient. The composite nature allows the solution to address multiple contamination mechanisms simultaneously, maintaining manufacturing precision despite reduced feature dimensions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The CMP cleaning solution effectively removes residues and inhibitor molecules, improving the wettability and cleanability of the semiconductor surface, ensuring proper adhesion and performance in subsequent processing steps.
Implementation Method 1
The cleaning solution includes a host having at least one ring. The host has a hydrophilic exterior and a hydrophobic interior. In an embodiment, the host forms a host-guest complex with a CMP inhibitor disposed on the first surface of the semiconductor device.
Implementation Method 2
A CMP cleaning solution is applied to remove inhibitor molecules and residues from the CMP process, utilizing a cleaning solution comprising chelator molecules, carrier molecules, and a surfactant to enhance the cleaning efficiency
Implementation Method 3
the host forms a host-guest complex with a CMP inhibitor disposed on the first surface of the semiconductor device
Data Source
AI summary
A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.


