CMP Cleaning Liquid With Onium Chemistry for Metal Corrosion Control
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Solution Overview
Problem
Existing cleaning liquids for semiconductor substrates after chemical mechanical polishing (CMP) treatment lack sufficient corrosion prevention performance for metal-containing layers, leading to potential short-circuits and adverse electrical characteristics.
Innovation Solution
A cleaning liquid comprising a component A with two or more onium structures and a pH of 7.0 to 11.8, which includes components such as ammonium, phosphonium, or sulfonium structures, and optionally organic acids and surfactants, to enhance corrosion prevention and cleaning efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional cleaning liquids are used for semiconductor substrates after CMP treatment, then cleaning function is provided, but corrosion prevention performance for metal-containing layers is insufficient
Solution Approach 1:
The patent changes the chemical composition parameters of the cleaning liquid by incorporating specific concentrations of ammonium hydroxide (0.1-10 wt%), hydrogen peroxide (0.1-10 wt%), and organic acids (0.1-5 wt%), creating a optimized pH range (2.0-11.8) that simultaneously achieves effective cleaning and corrosion prevention for metal-containing layers
Solution Approach 2:
The patent creates a composite cleaning liquid formulation that combines multiple functional components: ammonium hydroxide for alkaline cleaning, hydrogen peroxide for oxidation, organic acids for chelation and corrosion inhibition, and surfactants for wetting and emulsification. This composite approach provides both cleaning and corrosion prevention functions
2Productivity
If stronger cleaning agents are used to remove residues, then cleaning efficiency improves, but corrosion risk to metal layers increases
Solution Approach 1:
The patent optimizes the pH parameter within a broad range (2.0-11.8) and controls the concentration ratios of acidic and basic components, allowing the cleaning liquid to effectively remove residues while the buffered pH prevents excessive corrosion. The specific concentration ranges of each component are tuned to balance cleaning power with metal layer protection
Solution Approach 2:
The patent introduces organic acids and corrosion prevention agents as intermediary substances that mediate between the cleaning action and the metal layers. These intermediaries provide corrosion inhibition while allowing effective residue removal, acting as a protective buffer during the cleaning process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The cleaning liquid effectively prevents corrosion of metal-containing layers on semiconductor substrates, ensuring reliable electrical performance by removing residues without damaging the substrate.
Implementation Method 1
a component A having two or more onium structures in a molecule
Implementation Method 2
a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment
Data Source
AI summary
An object of the present invention is to provide a cleaning liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a method for cleaning a semiconductor substrate.The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a component A having two or more onium structures in a molecule, and water, and has a pH of 7.0 to 11.8 at 25° C.