Semiconductor CMP Cleaning Liquid for Ruthenium Oxide Removal
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Solution Overview
Problem
Current cleaning liquids for semiconductor substrates after CMP treatment, particularly those with ruthenium metal films, face challenges in achieving excellent cleaning performance and ruthenium oxide dissolving ability, leading to residual organic and metal oxides on the substrate.
Innovation Solution
A cleaning liquid comprising specific purine compounds and a compound represented by Formula (A), along with other additives like N-methyldiethanolamine, quaternary ammonium compounds, and organic acids, is formulated to enhance cleaning performance and ruthenium oxide dissolving ability, with specific concentration ranges and pH levels optimized for effectiveness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional cleaning liquids are used for semiconductor substrates after CMP treatment, then general cleaning is achieved, but ruthenium oxide dissolving ability is insufficient
Solution Approach 1:
The patent changes the chemical composition parameters of the cleaning liquid by incorporating specific purine compounds (adenine, guanine, hypoxanthine, xanthine, or uric acid) at controlled concentrations (0.01-10 wt%). This compositional parameter change enables the cleaning liquid to effectively dissolve ruthenium oxide residues while maintaining compatibility with semiconductor substrates, directly resolving the insufficient dissolving ability of conventional cleaners.
Solution Approach 2:
The patent creates a composite cleaning liquid formulation that combines purine compounds with other cleaning agents, surfactants, and additives. This composite approach synergistically enhances both the ruthenium oxide dissolving ability and general cleaning performance, while preventing residue formation through the combined action of multiple functional components.
2Reliability
If conventional cleaning liquids are used for semiconductor substrates after CMP treatment, then general cleaning is achieved, but organic residue removal is insufficient
Solution Approach 1:
The patent modifies the cleaning liquid's chemical properties by incorporating purine compounds at optimized concentrations and controlling pH levels (7-14). These parameter changes enhance the liquid's ability to remove organic residues from semiconductor substrates through improved chemical interaction and solvation, directly addressing the insufficient organic residue removal of conventional cleaners.
Solution Approach 2:
The purine compounds act as intermediary substances that facilitate the removal of organic residues by mediating chemical interactions between the cleaning liquid and organic contaminants. These intermediaries enable effective residue removal while maintaining substrate integrity, resolving the cleaning performance limitation.
3Reliability
If polishing fine particles, metal films, and barrier metal components remain on substrate surface after CMP, then cleaning step is required, but residual particles cause short-circuit and affect electrical characteristics
Solution Approach 1:
The patent optimizes the cleaning liquid's chemical composition parameters including purine compound concentration (0.01-10 wt%), pH (7-14), and additive ratios to enhance particle removal efficiency. These parameter adjustments enable complete removal of polishing particles, metal films, and barrier metal components, preventing short-circuits and preserving electrical characteristics.
Solution Approach 2:
The cleaning liquid components, particularly purine compounds and surfactants, serve as intermediary agents that facilitate particle removal by reducing adhesion forces between residues and the substrate surface. This intermediary action enables effective removal of fine particles and metal components, ensuring electrical characteristic integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The cleaning liquid effectively removes organic residues and ruthenium oxide from semiconductor substrates, ensuring improved cleaning performance and preventing metal oxide residue, thus enhancing the electrical characteristics of semiconductor elements.
Implementation Method 1
a cleaning liquid comprising: at least one purine compound selected from the group consisting of purine and a purine derivative, and a compound represented by Formula (A)
Implementation Method 2
The cleaning liquid effectively removes organic residues and ruthenium oxide from semiconductor substrates
Data Source
AI summary
An object of the present invention is to provide a cleaning liquid for a semiconductor substrate, which has excellent cleaning performance and excellent ruthenium oxide dissolving ability in a case of being applied as a cleaning liquid after a CMP treatment of a semiconductor substrate including a metal film. A cleaning liquid for a semiconductor substrate according to the present invention is a cleaning liquid for a semiconductor substrate, which is used for cleaning a semiconductor substrate, where the cleaning liquid contains at least one purine compound selected from the group consisting of purine and a purine derivative and a compound represented by Formula (A).