CMP Conditioning Disk Indentation Depth Control

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Solution Overview

Problem

The chemical mechanical polishing (CMP) process in semiconductor manufacturing faces challenges in maintaining optimal polishing pad conditions, leading to issues such as vibration, noise, and uneven polishing due to improper indentation depth of conditioning disks during pad conditioning.

Innovation Solution

A method and apparatus for determining and controlling the indentation depth of conditioning disks into the polishing pad, using a support plate, pressing device, and height sensor to measure and adjust the indentation depth within a permissible range, ensuring effective pad conditioning and improved polishing characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the indentation depth of the conditioning disk is not controlled properly, then the pad conditioning process is simple and fast, but vibration and noise occur during CMP, and polishing uniformity deteriorates

Engineering Contradiction:

Improvepolishing uniformityVSAvoidindentation depth control system

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by measuring the indentation depth of the conditioning disk before the CMP process and adjusting it to be within a specific range. This pre-control of indentation depth prevents vibration and noise during polishing, ensuring polishing uniformity without requiring complex real-time control systems during the actual CMP operation.

Inventive Principle:

Principle #10Preliminary action

2Reliability

If the indentation depth of the conditioning disk is increased to improve pad conditioning effectiveness, then pad conditioning quality improves, but vibration and noise increase during CMP

Engineering Contradiction:

Improvepad conditioning qualityVSAvoidvibration and noise

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent applies parameter changes by establishing a specific indentation depth range (0.5 mm to 2.0 mm) that optimizes the balance between pad conditioning quality and vibration reduction. By controlling the indentation depth parameter within this range, the patent achieves effective pad conditioning while minimizing harmful vibrations and noise during the CMP process.

Inventive Principle:

Principle #35Parameter changes

3Reliability

If conditional disk tips are inserted too deeply into the polishing pad, then pad conditioning is more effective, but scratches occur on the wafer surface

Engineering Contradiction:

Improvepad conditioning effectivenessVSAvoidwafer surface quality

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent applies feedback by measuring the indentation depth of the conditioning disk and using this information to control and adjust the indentation depth within the optimal range. This feedback mechanism ensures that the conditioning disk inserts sufficiently deep to effective conditioning the pad while preventing excessive insertion that would cause wafer scratches, thus maintaining both conditioning effectiveness and wafer surface quality.

Inventive Principle:

Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the CMP process by reducing vibration and noise, maintaining consistent polishing pad conditions, and minimizing scratches on wafers, thereby improving the overall efficiency and quality of semiconductor device manufacturing.

Implementation Method 1

a height sensor configured to measure the indentation depth

Methodology Applied

Scientific EffectPosition detection:

Implementation Method 2

a pressing device configured to apply the conditioning load to the conditioning disk to insert the tips of the conditioning disk into the polishing pad

Methodology Applied

Scientific EffectMechanical compression: Compression

Implementation Method 3

conditioning a surface of the polishing pad by using the conditioning disk while applying the first load to the conditioning disk

Methodology Applied

Scientific EffectAbrasion: Abrasion

Implementation Method 4

pad conditioning for finely cutting the surface of the polishing pad

Methodology Applied

Scientific EffectFriction: Friction

Implementation Method 5

a chemical mechanical polishing (CMP) process is a process of evenly polishing a surface of a wafer by using a chemical reaction and a mechanical force

Methodology Applied

Scientific EffectChemical reaction:

Implementation Method 6

polishing the first material layer by rubbing the polishing pad and the semiconductor substrate together while supplying a slurry for chemical mechanical polishing

Methodology Applied

Scientific EffectMechanical force: Mechanical Force

Data Source

PatentUS10525566B2Preparing conditioning disk for chemical mechanical polishing and chemical mechanical polishing method including the same

Publication Date: 2020.01.07 SAMSUNG ELECTRONICS CO LTD

AI summary

A chemical mechanical polishing (CMP) method includes preparing a polishing pad, determining a first load to be applied to a conditioning disk during conditioning of the polishing pad and a first indentation depth at which tips of the conditioning disk are inserted into the polishing pad when the first load is applied to the conditioning disk, preparing a conditioning disk, and positioning the conditioning disk on the polishing pad and conditioning a surface of the polishing pad by using the conditioning disk while applying the first load to the conditioning disk.