3D Semiconductor Via Plug Support Pattern for CMP Dishing

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Solution Overview

Problem

The increasing integration of semiconductor devices leads to challenges in vertically aligning fine contact plugs with large aspect ratios, and the CMP process causes dishing issues affecting the flatness and alignment between contact plugs.

Innovation Solution

The implementation of support patterns that contact the side surface of lower via plugs, which are coplanar with their top surfaces, helps alleviate dishing and improves alignment margins by acting as a CMP stopper or resistor, ensuring the lower via plugs and upper via plugs remain electrically connected.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If multiple CMP processes are performed to achieve fine pitch and space between interconnections and contact plugs, then manufacturing precision is improved, but dishing occurs causing flatness degradation and alignment issues

Engineering Contradiction:
Improvealignment precision between contact plugsVSAvoidflatness of contact plug surfaces
Core Design Contradiction:
Manufacturing precisionVSShape

Solution Approach 1:

The support pattern is formed in advance before the CMP process, serving as a predetermined structural element that will counteract dishing during subsequent CMP operations. This preliminary structure is designed to maintain surface flatness throughout the manufacturing process

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The support pattern acts as an intermediary element between the contact plug and the CMP process. It provides mechanical support and distributes CMP pressure, preventing direct damage to the contact plug surface and maintaining alignment precision without compromising flatness

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If the pitch and space between interconnections and contact plugs are reduced for higher integration, then device density is improved, but alignment difficulty between fine contact plugs increases

Engineering Contradiction:
Improvedevice integration densityVSAvoidvertical alignment precision of contact plugs
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The support structure is segmented into multiple support patterns distributed across the substrate, each providing localized alignment assistance. This segmentation allows precise control over individual contact plug positions while maintaining overall high device density

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The support pattern extends in the horizontal dimension to provide broader alignment reference for vertically aligned contact plugs. By creating a lateral support structure, the patent transforms a vertical alignment problem into a two-dimensional positioning solution, improving alignment precision without reducing pitch

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS11930640B2Three-dimensional semiconductor device having a support pattern in contact with a side surface of a contact plug
Publication Date: 2024.03.12 SK HYNIX INC
  • US11930640B2 patent drawing
  • US11930640B2 patent drawing
  • US11930640B2 patent drawing

AI summary

The semiconductor device includes a substrate having a cell area and a via area; a transistor and a logic interconnection disposed over the substrate; a lower insulating layer covering the transistor and the logic interconnection; a lower conductive layer on the lower insulating layer in the cell area; a support pattern disposed on the lower insulating layer in the via area; a lower via plug having a side surface in contact with the support pattern and a bottom surface in contact with the logic interconnection; a word line stack disposed on the lower conductive layer in the cell area; an dielectric layer stack disposed on the support pattern in the via area; a vertical channel pillar penetrating the word line stack to be connected to the lower conductive layer; and an upper via plug penetrating the dielectric layer stack to be vertically aligned with the lower via plug.