CMP Offset Correction Using Layout-Trained Measurement Models

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Solution Overview

Problem

In semiconductor device manufacturing, the CMP process requires reliable measurement of micropatterns, but existing optical methods for large-area offset measurement are inefficient and require additional processes, such as forming a metal film, which increases turnaround time.

Innovation Solution

An offset data correction method that involves measuring a semiconductor device post-CMP, generating an offset correction model using measured and layout data, and applying this model to correct measured data, thereby improving measurement reliability without the need for additional processes like forming a metal film.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If an additional process of forming a metal film is performed to check large-area offset by optical method, then measurement capability is improved, but turnaround time increases and process complexity increases

Engineering Contradiction:
Improveoffset measurement capabilityVSAvoidturnaround time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent extracts and removes the unnecessary metal film formation process from the measurement workflow. By using optical metrology to directly measure the semiconductor device structure without requiring metal film deposition, the method eliminates this redundant step while maintaining measurement capability through direct optical inspection of the device geometry

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent makes the optical measurement system universal by enabling it to perform both small-area and large-area offset measurements without requiring different preparation methods. The same optical metrology tool can measure various structures (contact holes, trenches, vias) directly on the semiconductor device, eliminating the need for metal film formation that was previously required for certain measurement types

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Measurement precision

If an additional process of forming a metal film is performed to check large-area offset by optical method, then measurement capability is improved, but process complexity increases

Engineering Contradiction:
Improveoffset measurement capabilityVSAvoidprocess complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent extracts and removes the unnecessary metal film formation process from the measurement workflow. By using optical metrology to directly measure the semiconductor device structure without requiring metal film deposition, the method eliminates this redundant step while maintaining measurement capability through direct optical inspection of the device geometry

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent enables the semiconductor device structure itself to serve as the measurement target without requiring additional metal film layers. The device's own geometric features (contact holes, trenches, vias) are used as reference structures for optical measurement, making the device self-sufficient for measurement purposes and eliminating external process dependencies

Inventive Principle:
Principle #25Self-service

3Ease of operation

If conventional optical measurement method is used without correction model, then measurement process is simple, but measurement precision deteriorates due to offset errors

Engineering Contradiction:
Improvemeasurement process simplicityVSAvoidoffset measurement accuracy
Core Design Contradiction:
Ease of operationVSMeasurement precision

Solution Approach 1:

The patent implements a feedback mechanism where an offset correction model is trained using measured data and layout data, then applied to correct subsequent measurements. The system continuously learns from measurement results and adjusts offset corrections accordingly, improving measurement accuracy while maintaining operational simplicity through automated correction algorithms

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent performs preliminary training of the offset correction model using measured data and layout data before actual measurements. By pre-establishing the correction relationships between measured positions and actual positions based on device layout information, the system prepares correction parameters in advance that can be quickly applied during measurement without adding operational complexity

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS20250022713A1Offset data correction method and semiconductor device manufacturing method including the same
Publication Date: 2025.01.16 SAMSUNG ELECTRONICS CO LTD
  • US20250022713A1 patent drawing
  • US20250022713A1 patent drawing
  • US20250022713A1 patent drawing

AI summary

An offset data correction method includes measuring a measurement target that has undergone a chemical mechanical polishing (CMP) process, generating an offset correction model based on the measurement of the measurement target, and using the offset correction model, correcting measured data obtained from the measurement of the measurement target, wherein the offset correction model is trained by using the measured data and layout data of the measurement target as inputs.