CMP Pad 3D Network for Uniformity and Stability
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Solution Overview
Problem
Conventional CMP polishing pads lack global uniformity and local planarity, as well as mechanical stability, leading to issues with wafer scratching and slurry distribution during semiconductor wafer polishing.
Innovation Solution
A CMP polishing pad with a three-dimensional network of interconnecting polymeric elements and a polymer filler material, featuring interconnecting junction points at a density of 1 to 1000/cm³ and lengths between 0.1 microns to 20 cm, which enhances mechanical and dimensional stability and improves slurry distribution by reducing surface deformation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional polishing pads are used, then manufacturing is simpler, but global uniformity and local planarity are poor
Solution Approach 1:
The patent applies local quality by creating a three-dimensional network structure with varying densities of interconnecting junction points (1 to 1000/cm³) throughout the pad. This allows different regions of the pad to have different structural characteristics, enabling improved global uniformity and local planarity while maintaining manufacturing feasibility through controlled variation rather than complete complexity.
Solution Approach 2:
The patent transitions from conventional two-dimensional or simple three-dimensional structures to a complex three-dimensional network with interconnecting elements and junction points. This dimensional approach allows the pad to achieve better uniformity and planarity by distributing structural features throughout the volume, improving manufacturing precision without requiring overly complex surface treatments.
2Strength
If conventional polishing pads are used, then structure is simpler, but mechanical stability is insufficient
Solution Approach 1:
The patent employs composite materials by combining interconnecting elements with polymer filler material in a three-dimensional network. This composite structure provides enhanced mechanical stability through the synergistic effect of the network framework and filler material, achieving better strength without requiring a completely complex structure.
Solution Approach 2:
The patent utilizes porous materials through its three-dimensional network structure with controlled void spaces between interconnecting elements. This porous architecture provides mechanical stability through the network framework while maintaining ease of manufacture through standard porous material fabrication techniques, avoiding the need for overly complex dense structures.
3Reliability
If conventional polishing pads are used, then structure is simpler, but slurry distribution is poor and wafer scratching occurs
Solution Approach 1:
The patent applies local quality by creating regions with different densities of interconnecting junction points throughout the pad structure. This allows optimized local characteristics for slurry distribution and wafer scratching resistance without requiring complete complexity throughout the entire pad, improving reliability through targeted structural variation.
Solution Approach 2:
The patent segments the pad structure into distinct interconnecting elements and polymer filler material phases within the three-dimensional network. This segmentation creates pathways for improved slurry distribution and reduces wafer scratching by distributing mechanical stress through the network structure, achieving better reliability without uniform complexity.
Data Source
AI summary
The present disclosure is directed at a chemical-mechanical planarization polishing pad comprising interconnecting elements and a polymer filler material, wherein the interconnecting elements include interconnecting junction points that are present at a density of 1 interconnecting junction point/cm3 to 1000 interconnecting junction points/cm3, and wherein the interconnecting elements have a length between interconnection junction points of 0.1 microns to 20 cm.