CMP Polishing Pad Selection Using Color and Zeta Potential
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Solution Overview
Problem
Existing polishing pads for chemical mechanical planarization (CMP) processes in semiconductor manufacturing require direct polishing tests to assess performance, which is inconvenient and affects yield due to defects and changes in polishing properties.
Innovation Solution
A polishing pad treated with a 3% by weight aqueous H2O2 solution at 70° C. for 90 hours, exhibiting a peak at 1620 cm−1 to 1650 cm−1 in FT-IR spectrum, with a surface zeta potential variance of 0.1 to 10, allowing identification of color and zeta potential changes for selecting pads without direct testing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If direct polishing tests are performed to assess polishing pad performance, then polishing performance can be evaluated, but yield is reduced due to defects and time is lost
Solution Approach 1:
The patent applies preliminary action by treating the polishing pad with H2O2 solution before actual polishing to pre-modify the surface properties. This preliminary treatment creates a more stable and predictable polishing surface, reducing the need for extensive direct polishing tests and thereby improving yield while maintaining evaluation accuracy
Solution Approach 2:
The patent replaces the mechanical direct polishing test system with a chemical characterization system using FT-IR spectroscopy and zeta potential measurement. By substituting physical polishing tests with chemical and physical property measurements, the method eliminates defects caused by mechanical testing while maintaining the ability to evaluate polishing performance
2Productivity
If polishing pad properties are changed to improve polishing performance, then polishing speed and profile are enhanced, but defects may occur on the wafer
Solution Approach 1:
The patent applies parameter changes by modifying the chemical composition and surface properties of the polishing pad through controlled H2O2 treatment. This treatment adjusts parameters such as surface zeta potential and chemical functional groups to achieve optimal polishing performance while minimizing wafer defects
Solution Approach 2:
The patent implements feedback by using FT-IR spectroscopy and zeta potential measurement to monitor and control the polishing pad properties after H2O2 treatment. This feedback mechanism ensures that the polishing pad achieves the desired performance characteristics without causing wafer defects, allowing for precise control of the polishing process
3Reliability
If polishing pad composition is modified to achieve desired properties, then polishing performance is improved, but manufacturing complexity increases
Solution Approach 1:
The patent simplifies manufacturing by changing the treatment parameters (H2O2 concentration, treatment time, temperature) rather than modifying the complex polymer composition. This approach achieves consistent polishing performance through controllable physical-chemical treatment rather than complex material formulation
Solution Approach 2:
The patent applies preliminary action by performing H2O2 treatment as a separate pre-processing step before polishing. This separates the performance optimization from the manufacturing process, allowing standard manufacturing procedures to be maintained while achieving improved and consistent polishing performance through the preliminary chemical treatment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Maintains polishing performance, minimizes defects, and reduces scratches by repulsive force, improving yield and planarization through color and zeta potential changes under acidic conditions.
Implementation Method 1
the polishing layer is treated with 3% by weight of an aqueous H2O2 solution for 90 hours at 70° C.
Implementation Method 2
exhibiting properties of change in color and change in surface zeta potential when performing a polishing process using a slurry including an oxidizing agent
Data Source
AI summary
A polishing pad and a method for manufacturing the same of the present disclosure maintain polishing performance required for a polishing process such as a polishing speed or a polishing profile, minimize defects that may occur on a wafer during a polishing process, and exhibit a property of color change when performing a polishing process using a slurry including an oxidizing agent. In addition, when using a polishing pad in a CMP process, a condition for selecting a polishing pad capable of distinguishing the use of polishing pad in a polishing process may be provided by identifying the degree of color change in the polishing pad under an acidic condition without a direct polishing test.