CMP Pad Pattern Substrate for Uniform Polishing
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Solution Overview
Problem
Conventional chemical mechanical polishing pads face challenges in maintaining uniform polishing performance and followability with the wafer surface due to irregularities in protrusions and grooves, which are difficult to control and adjust for specific polishing conditions, leading to inconsistent results and reduced efficiency.
Innovation Solution
A chemical mechanical polishing pad with a pattern structure featuring figure units that have a predetermined contact area ratio and circumferential length per unit area, allowing for controlled surface topography and improved liquid distribution, enabling uniform polishing performance and increased efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conditioning is continuously performed during polishing to maintain uniform polishing performance, then polishing performance uniformity is improved, but device complexity and operational complexity increase
Solution Approach 1:
The patent applies preliminary action by pre-forming the protrusion pattern structure on the polishing pad before polishing begins. The pattern substrate is embedded in the pad material during manufacturing, creating predetermined protrusions with specific geometries, densities, and distributions. This eliminates the need for continuous conditioning during polishing, as the topography is already optimized for uniform polishing performance from the start.
2Manufacturing precision
If conditioning process variables (diamond size, density, rotational speed, pressure) are adjusted to control protrusion shape and size, then surface topography control is improved, but manufacturing complexity and process control difficulty increase
Solution Approach 1:
The desired surface topography is pre-established by embedding a pattern substrate with predetermined protrusion patterns into the polishing pad during manufacturing. This eliminates the need for complex conditioning processes to create the topography, as the protrusions are already formed with precise geometries, sizes, and distributions before the pad is put into service.
Solution Approach 2:
The patent replaces the mechanical conditioning process (using diamond particles to scratch and shape the pad surface) with a direct embedding approach. Instead of using mechanical forces and abrasive wear to create the topography, the pattern substrate is integrated into the pad material, transferring the protrusion pattern directly during pad fabrication. This substitution eliminates the complexity of controlling multiple conditioning variables.
3Adaptability or versatility
If conventional conditioning is used to form protrusions, then polishing pad topography is created, but it is difficult to adjust shape and size for specific polishing conditions
Solution Approach 1:
The patent applies local quality by creating a pattern substrate with spatially varying protrusion characteristics. Different regions of the substrate can have protrusions with different geometries, sizes, densities, and distributions, allowing the polishing pad to provide locally optimized topography for specific polishing conditions. This enables adaptation to different polishing requirements across different areas of the wafer or for different material types.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The pad maintains consistent polishing performance by optimizing the contact area and liquid distribution, improving followability with the wafer surface and enhancing the overall efficiency of the polishing process.
Implementation Method 1
The chemical mechanical polishing (CMP) process is a process for processing a substrate (wafer, etc.) to be processed while applying pressure and rotation to the surface of a pad, which is a rotating counterpart, and for polishing the surface of the substrate
Implementation Method 2
Among these grooves and protrusions, the grooves serve as a supply path for the polishing liquid
Data Source
AI summary
The present invention relates to a chemical mechanical polishing pad having a pattern structure. The configuration of the present invention provides a chemical mechanical polishing pad having a pattern structure including a polishing pad configured to polish a wafer placed thereon; and a plurality of figure units formed on the polishing pad and formed to protrude from an upper portion of the polishing pad. The figure units are formed to have a predetermined contact area ratio and a predetermined circumferential length per unit area which correspond to a target polishing characteristic.


