CMP Polishing Pad Temperature Control for Slurry Reduction
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Solution Overview
Problem
The CMP process for semiconductor manufacturing is costly due to high slurry consumption, and reducing slurry supply amounts deteriorates CMP characteristics, leading to issues like Cu dishing, corrosion, dust, scratch, and increased polishing time.
Innovation Solution
Adjusting the entrance and exit temperatures of the polishing pad during CMP, with the entrance temperature set to 30° C. or less and the exit temperature higher by 5° C. or more, while maintaining a higher polishing load and lower slurry flow rate, to improve CMP characteristics and reduce slurry usage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of substance
If the slurry supply amount is reduced to lower costs, then the cost decreases, but the CMP characteristics deteriorate with increased Cu dishing, corrosion, dust, scratch, and residue
Solution Approach 1:
The invention changes the temperature parameter of the polishing pad, specifically maintaining the entrance temperature at 50°C or higher, to improve CMP characteristics while using reduced slurry supply amounts. This temperature parameter change enables effective CMP processing with lower slurry consumption, resolving the contradiction between cost reduction and quality maintenance
2Loss of substance
If the slurry supply amount is reduced to lower costs, then the cost decreases, but the polishing time prolongs especially for thick Cu films
Solution Approach 1:
By maintaining the polishing pad entrance temperature at 50°C or higher, the invention accelerates the CMP reaction rate and improves polishing efficiency. This temperature control enables effective polishing of thick Cu films (1-3 μm) in reasonable time while using reduced slurry supply amounts, thus resolving the contradiction between cost reduction and time efficiency
3Manufacturing precision
If the entrance temperature of the polishing pad is increased to 50°C or higher to improve CMP characteristics with reduced slurry, then the polishing effectiveness improves, but the temperature control complexity increases
Solution Approach 1:
The invention applies preliminary heating to the polishing pad before the Cu film polishing step, ensuring the entrance temperature is 50°C or higher at the start of polishing. This preliminary temperature preparation enables effective CMP with reduced slurry from the beginning, avoiding the need for complex real-time temperature adjustment systems during the polishing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for reduced slurry consumption, lowering costs while maintaining or improving CMP performance by enhancing the polishing process's efficiency and effectiveness.
Implementation Method 1
CMP (Chemical Mechanical Polishing)
Data Source
AI summary
According to one embodiment, a semiconductor device manufacturing method is disclosed. The method can include polishing a film on a semiconductor substrate by pressing the film against a polishing pad. Polishing the film comprises performing first polishing in which an entrance temperature of the polishing pad is adjusted to 40° C. (inclusive) to 50° C. (inclusive), and an exit temperature of the polishing pad is adjusted to be higher by 5° C. or more than the entrance temperature. Polishing the film comprises performing second polishing in which the entrance temperature is adjusted to 30° C. or less, and the exit temperature is adjusted to be higher by 5° C. or more than the entrance temperature.