CMP Platen with Segmented Gas and Slurry Holes
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Solution Overview
Problem
Current chemical-mechanical polishing (CMP) processes face challenges in precisely controlling pressure between the semiconductor wafer and the polishing pad, leading to inconsistent planarization and potential defects during the polishing and dechunking stages.
Innovation Solution
The CMP apparatus employs a platen with differently sized holes for liquid and gas supply, allowing for precise control of slurry and gas flow rates to manage pressure, combined with a controller for feedback loop adjustments based on real-time endpoint module data, ensuring optimal polishing and dechunking.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional CMP processes are used, then polishing can be performed, but pressure control between wafer and pad is imprecise leading to inconsistent planarization
Solution Approach 1:
The platen is segmented into multiple zones with different hole sizes (first holes and second holes) to enable independent control of slurry and gas flow rates in different regions, allowing precise local pressure control during polishing and dechunking operations
Solution Approach 2:
The system dynamically adjusts flow rates of slurry and gas through the platen holes based on real-time endpoint module feedback, enabling adaptive pressure control that responds to changing wafer profile conditions during the CMP process
2Reliability
If flow rates are not precisely controlled, then simpler system operation is maintained, but defects occur during polishing and dechunking stages
Solution Approach 1:
An endpoint module monitors the wafer polishing state in real-time and provides feedback to the controller, which automatically adjusts slurry and gas flow rates through the platen holes to maintain optimal polishing conditions and prevent defects
Solution Approach 2:
The system uses pneumatic control through gas flow and hydraulic control through slurry flow to precisely regulate pressure between the wafer and polishing pad, enabling defect-free polishing and dechunking operations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise pressure control during CMP, enhancing planarization accuracy and reducing defects by adjusting flow rates according to the wafer's profile, thus improving the overall CMP process efficiency.
Implementation Method 1
introducing a slurry through at least one first hole of the platen to the top side of the polish pad
Implementation Method 2
introducing a gas through a second hole of the platen to the top side of the polish pad... moving the wafer away from the polish pad while introducing the gas is being performed
Data Source
AI summary
A chemical-mechanical polishing method includes placing a wafer onto a top side of a polish pad disposed on a platen; introducing a slurry through at least one first hole of the platen to the top side of the polish pad; polishing the wafer with the top side of the polish pad; introducing a gas through a second hole of the platen to the top side of the polish pad after polishing the wafer, wherein an opening diameter of the at least one first hole is greater than an opening diameter of the second hole; and moving the wafer away from the polish pad while introducing the gas is being performed.