CMP Polishing Composition for Amorphous Carbon Residue Control
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Solution Overview
Problem
Current polishing compositions for semiconductor processes are ineffective in efficiently polishing amorphous carbon layers, leading to low polishing rates and carbon residue adsorption on substrates, which causes defects and contamination.
Innovation Solution
A polishing composition containing abrasive particles and a surfactant, with a specific ratio that satisfies the equation Ra100+100S, where Ra is the polishing rate and S is the surfactant content, is used to enhance polishing efficiency and prevent carbon residue adsorption, while also stabilizing the composition for storage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional polishing compositions are used for amorphous carbon layers, then the polishing process can be performed, but the polishing rate is low and carbon residue adsorbs onto the substrate
Solution Approach 1:
The patent changes the chemical composition parameters of the polishing slurry by introducing a specific surfactant (fluorosurfactant or polyethylene glycol-based surfactant) and adjusting the pH to 2-4 using nitric acid. This parameter change transforms the slurry's interaction with carbon residues, preventing re-adsorption while maintaining high polishing rate through optimized chemical composition
Solution Approach 2:
The surfactant acts as an intermediary substance between the abrasive particles and the carbon residue. It mediates the interaction by adsorbing onto the carbon residue surfaces and preventing their re-attachment to the substrate, while allowing the abrasive particles to effectively remove the carbon layer through mechanical action
2Productivity
If polishing composition with high abrasive content is used, then polishing rate increases, but carbon residue removal efficiency decreases
Solution Approach 1:
The patent creates a composite polishing slurry system combining abrasive particles (colloidal silica or cerium oxide) with specific surfactants and pH adjusters. This composite formulation allows the abrasive component to provide mechanical removal power while the surfactant component provides chemical action to prevent carbon residue re-adsorption, achieving both high polishing rate and high precision carbon residue removal
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves an excellent polishing rate for amorphous carbon layers, prevents carbon residue from re-adsorbing onto substrates, and maintains stability during storage, thereby reducing defects and contamination.
Implementation Method 1
prevents a carbon residue from adsorbing onto a substrate
Implementation Method 2
containing an abrasive particle and a surfactant
Implementation Method 3
a surface of the substrate is polished while the substrate is pressurized and rotated
Data Source
AI summary
The present invention relates to a semiconductor process polishing composition and a semiconductor device manufacturing method in which the polishing composition is applied, and can provide a preparation method applied to a CMP process for an amorphous carbon layer, and thus exhibits a high polishing rate, prevents, during a CMP process, the re-adsorption of carbon residue on a semiconductor substrate and the contamination of a polishing pad, and stabilizes an accelerator in the polishing composition so that the storage stability thereof is excellent. In addition, provided is a semiconductor device manufacturing method in which the semiconductor process polishing composition is applied.