CMP Polishing Composition With Dual Biocides for Storage Stability
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Solution Overview
Problem
The chemical mechanical polishing (CMP) process in semiconductor manufacturing faces challenges with polishing performance degradation due to microbial and mold growth, leading to defects in polished products, and there is a need for improved storage stability of polishing compositions.
Innovation Solution
A polishing composition comprising polishing particles, water, and a biocide combination of thiazolinone-based and chloric acid-based compounds, along with a pad protector, is used to inhibit microbial growth and enhance storage stability, while maintaining effective polishing performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single biocide is used in the polishing composition, then the formulation is simple, but microbial and mold growth occurs leading to polishing performance degradation and defects
Solution Approach 1:
The patent uses a composite biocide system combining two different biocides (first biocide and second biocide) with distinct mechanisms of action. This composite approach provides synergistic antimicrobial and antifungal effects, preventing both bacterial growth and mold formation that single biocides cannot adequately prevent, thereby resolving the contradiction between simple formulation and reliable storage stability.
Solution Approach 2:
The biocide system is segmented into two functional components: a first biocide targeting bacterial growth and a second biocide targeting fungal and mold growth. This segmentation allows each biocide to specialize in combating specific microorganisms, providing comprehensive protection against all types of microbial contamination while maintaining controlled formulation complexity.
2Reliability
If high concentrations of biocide are used to prevent microbial growth, then storage stability improves, but polishing performance degrades due to excessive biocide interference
Solution Approach 1:
The patent employs partial action by using low concentrations of two biocides (0.01-0.15 wt% first biocide and 0.005-0.1 wt% second biocide) rather than high concentrations of a single biocide. This partial approach provides sufficient microbial protection while minimizing biocide interference with polishing performance, resolving the contradiction between storage stability and polishing quality.
Solution Approach 2:
The patent changes the concentration parameters of biocides to optimized ranges that balance antimicrobial effectiveness with polishing performance. By establishing specific concentration ranges (0.01-0.15 wt% for first biocide, 0.005-0.1 wt% for second biocide), the formulation achieves both storage stability and high-quality polishing without excessive biocide interference.
3Manufacturing precision
If no biocide is added to the polishing composition, then the formulation remains simple and polishing performance is maintained, but microbial and mold growth occurs causing performance degradation and defects
Solution Approach 1:
The patent applies preliminary anti-action by incorporating biocides into the polishing composition formulation before use. This preventive approach counteracts potential microbial and mold growth before it can occur, protecting the polishing composition from degradation and preventing defect formation on polished substrates, thus resolving the contradiction between maintaining simple formulation and preventing harmful microbial contamination.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively inhibits bacterial and fungal growth, improves storage stability, and reduces defects in polished substrates, enabling efficient and high-quality polishing of semiconductor surfaces.
Implementation Method 1
a biocide, wherein the biocide includes a first biocide and a second biocide, the first biocide includes a thiazolinone-based compound, and the second biocide includes a chloric acid-based compound
Implementation Method 2
polishing particles, water, and a biocide... The polishing particles may include colloidal silica... by planarizing a surface of the substrate by a polishing surface of the polishing pad
Implementation Method 3
The polishing particles may include colloidal silica... When the composition for semiconductor processing is left in an atmosphere of 60° C. for 12 hours, there are no more than 15 particles having a diameter of 5 μm or more per liter of the composition for semiconductor processing
Data Source
AI summary
A composition for semiconductor processing includes polishing particles, water, and a biocide. The biocide includes a first biocide and a second biocide, the first biocide includes a thiazolinone-based compound, and the second biocide includes a chloric acid-based compound.