CMP Polishing Composition for Hard Resin Removal Speed

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Solution Overview

Problem

Semiconductor devices with advanced multilayer wiring require increased polishing speed during the CMP process, which is hindered by the use of hard resins like polyimide and epoxy, necessitating a polishing composition that enhances polishing efficiency.

Innovation Solution

A polishing composition comprising alumina abrasive grains and an anionic surfactant with two or more benzene rings, a content of 0.2% or more, and a mass ratio of 1:0.1 or more, with a pH of 2 to 8, to improve the interaction between abrasive grains and resin surfaces.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If hard resins like polyimide or epoxy are used for advanced multilayer wiring, then insulation properties are improved, but polishing speed decreases

Engineering Contradiction:
Improveinsulation propertiesVSAvoidpolishing speed
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The invention changes the chemical composition parameters of the polishing slurry by introducing an anionic surfactant with two or more benzene rings. This surfactant modifies the interaction between alumina abrasive grains and the hard resin surface, enabling effective polishing of polyimide and epoxy resins while maintaining their insulation properties. The specific structural parameter (benzene rings) of the surfactant is critical for achieving both good insulation and high polishing speed.

Inventive Principle:
Principle #35Parameter changes

2Stability of the object's composition

If conventional polishing slurry with single benzene ring surfactant is used, then alumina abrasive grains are supplied evenly to polishing pad, but polishing speed of hard resins is insufficient

Engineering Contradiction:
Improveeven supply of abrasive grainsVSAvoidpolishing speed
Core Design Contradiction:
Stability of the object's compositionVSProductivity

Solution Approach 1:

The invention changes the molecular structure parameter of the surfactant from one benzene ring to two or more benzene rings. This structural parameter change enhances the surfactant's ability to interact with hard resin surfaces while maintaining its function of evenly distributing alumina abrasive grains on the polishing pad, thereby achieving both stability and high polishing speed.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention creates a composite polishing slurry system combining alumina abrasive grains with a specifically structured anionic surfactant (having two or more benzene rings). This composite formulation synergistically combines the mechanical polishing action of alumina with the surface-active properties of the multi-benzene ring surfactant, enabling effective polishing of hard resins while maintaining stable abrasive grain distribution.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition significantly increases polishing speed and affinity between abrasive grains and resin, enhancing the CMP process efficiency for semiconductor devices and other resin-based materials.

Implementation Method 1

the anionic surfactant has two or more benzene rings... the composition significantly increases polishing speed and affinity between abrasive grains and resin

Methodology Applied
Scientific EffectAdsorption: Adsorption

Data Source

PatentEP4636052A1Polishing composition
Publication Date: 2025.10.22 NITTA DUPONT INC
  • EP4636052A1 patent drawing
  • EP4636052A1 patent drawing
  • EP4636052A1 patent drawing

AI summary

Provided is a polishing composition used for polishing a resin, the polishing composition including: water; alumina abrasive grains; and an anionic surfactant, in which the anionic surfactant has two or more benzene rings.