CMP Polishing Composition for High Removal and Low Scratches
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Solution Overview
Problem
Existing chemical mechanical polishing (CMP) technologies demonstrate good polishing removal rates but fail to adequately reduce defects on the surface of polished semiconductor substrates.
Innovation Solution
A polishing composition comprising abrasive grains with a zeta potential of −5 mV or less, a first polyoxyalkylene compound with a weight average molecular weight of 100 to 900, and a second polyoxyalkylene compound with a different oxyalkylene unit and similar weight range, maintained at a pH of less than 7, to enhance polishing removal rates while reducing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional CMP technology is used, then polishing removal rate is improved, but surface defects increase
Solution Approach 1:
The patent applies parameter changes by controlling the pH of the polishing composition to be less than 7 (acidic condition) and specifying the zeta potential of abrasive grains to be -5 mV or less. These parameter adjustments optimize both the polishing removal rate and surface quality by modifying the chemical and physical properties of the polishing slurry, enabling simultaneous achievement of high productivity and low surface defects.
2Productivity
If high polishing removal rate is achieved, then productivity is improved, but manufacturing precision deteriorates
Solution Approach 1:
The patent resolves this contradiction by implementing specific parameter changes: maintaining pH < 7, controlling abrasive grain zeta potential ≤ -5 mV, and using polyoxyalkylene compounds with specific molecular weights (100-900). These parameter optimizations enable the polishing process to achieve high removal rates while simultaneously producing defect-free, flat surfaces, thus improving both productivity and manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves a good polishing removal rate for silicon-containing materials while significantly reducing defects such as scratches and organic residues on the polished surface.
Implementation Method 1
abrasive grains having a zeta potential of −5 mV or less
Implementation Method 2
The CMP is a method for flattening the surface of an object to be polished using a polishing composition that contains abrasive grains
Implementation Method 3
a first polyoxyalkylene compound having a weight average molecular weight of 100 or more and 900 or less; and a second polyoxyalkylene compound
Data Source
AI summary
The present disclosure provides a means by which a good polishing removal rate for an object to be polished including a silicon-containing material can be realized while at the same time reducing scratches on the surface of the object to be polished that has been polished. The present disclosure is a polishing composition containing: abrasive grains having a zeta potential of −5 mV or less; a first polyoxyalkylene compound having a weight average molecular weight of 100 or more and 900 or less; and a second polyoxyalkylene compound having an oxyalkylene unit different from that of the first polyoxyalkylene compound and having a weight average molecular weight of 100 or more and 900 or less, wherein the polishing composition has a pH of less than 7.