CMP Polishing Composition for Selective Tungsten and Oxide Planarization

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Solution Overview

Problem

The challenge in semiconductor manufacturing is achieving efficient polishing with minimal defects, such as dishing and erosion, particularly during the CMP process, especially when polishing metal wirings and insulating layers with varying properties.

Innovation Solution

A polishing composition comprising metal oxide particles with specific functional groups, a non-ionic polymer, and a chelator, which are optimized to maintain high polishing rates and stability, reducing defects and enhancing dispersibility.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional polishing compositions are used to maintain high polishing rate, then polishing speed is improved, but dishing and erosion defects increase

Engineering Contradiction:

Improvepolishing rateVSAvoiddishing and erosion defects

Core Design Contradiction:

ProductivityVSObject-affected harmful factors

Solution Approach 1:

The patent modifies the surface chemistry parameters of metal oxide particles by introducing specific functional groups (epoxy and amine groups) in controlled ratios. This chemical parameter change enables the particles to achieve optimal interaction with both tungsten and silicon oxide surfaces, maintaining high polishing rates while reducing defects through improved selectivity control.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The polishing composition uses composite metal oxide particles with dual functional groups grafted onto the surface. This composite structure combines the mechanical polishing capability of metal oxide particles with the chemical selectivity provided by epoxy and amine functional groups, achieving both high polishing rate and defect reduction.

Inventive Principle:

Principle #40Composite materials

2Productivity

If polishing composition is optimized for tungsten polishing, then tungsten polishing rate is improved, but selectivity for silicon oxide decreases

Engineering Contradiction:

Improvetungsten polishing rateVSAvoidpolishing selectivity

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies different functional groups at different locations on the particle surface, creating local chemical environments with varying affinities. The epoxy and amine groups are distributed on the metal oxide particle surface to provide localized chemical interactions that enhance tungsten polishing rate while maintaining selectivity for silicon oxide through differential surface chemistry.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

By adjusting the ratio of epoxy to amine functional groups on the particle surface, the patent optimizes the chemical interaction parameters with different materials. This parameter control enables simultaneous achievement of high tungsten polishing rate and appropriate silicon oxide selectivity through tailored surface chemistry composition.

Inventive Principle:

Principle #35Parameter changes

3Stability of the object's composition

If polishing composition stability is improved for long-term storage, then particle aggregation is reduced, but polishing rate may decrease

Engineering Contradiction:

Improvestorage stabilityVSAvoidpolishing rate

Core Design Contradiction:

Stability of the object's compositionVSProductivity

Solution Approach 1:

The epoxy and amine functional groups act as intermediaries that provide steric and electrostatic repulsion between particles, preventing aggregation during storage. These functional groups serve as protective intermediaries that maintain particle dispersion stability without compromising the mechanical polishing action, thus preserving polishing rate while improving storage stability.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition achieves improved polishing selectivity and stability, minimizing defects while maintaining high polishing efficiency for both tungsten and silicon oxide layers, even after long-term storage.

Implementation Method 1

a Chemical Mechanical Polishing (CMP) process may be used as a flattening technology to remove the height difference

Methodology Applied

Scientific EffectAbrasion: Abrasion

Implementation Method 2

metal oxide particles which have a surface that exposes functional groups as polishing particles, wherein the surface comprises a first functional group comprising an epoxy group in an end, and a second functional group comprising an amine group in the end

Methodology Applied

Scientific EffectChemical bonding: Chemical Bonding

Data Source

PatentUS12444611B2Semiconductor process polishing composition and polishing method of substrate applied with polishing composition

Publication Date: 2025.10.14 YOUNG CHANG CHEMICAL CO LTD

AI summary

A semiconductor process polishing composition, and a polishing method of a substrate applied with a polishing composition are provided. The process provides a polishing composition improved in the polishing rate, selectivity and dispersibility, and provides a manufacturing method of a substrate that is polished by applying such a polishing composition for a semiconductor process.