CMP Polishing Solution for Semiconductor Flatness
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Solution Overview
Problem
Conventional CMP polishing solutions face challenges in reducing seam generation and organic residue production during the polishing of semiconductor devices, particularly in the second polishing step where the barrier layer is polished, leading to poor flatness and increased wiring resistance.
Innovation Solution
A CMP polishing solution comprising a metal corrosion inhibitor with a 1,2,3-triazolo[4,5-b]pyridine skeleton, abrasive grains with a positive zeta potential, a metal oxide solubilizer, and an oxidizing agent is used to reduce seam generation and organic residue production, while maintaining effective polishing speed and surface flatness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional CMP polishing solutions are used to polish the barrier layer, then the polishing process can be completed, but seam generation and organic residue production increase, leading to poor flatness and increased wiring resistance
Solution Approach 1:
The patent converts the potentially harmful effects of conventional polishing solutions by introducing metal corrosion inhibitors (benzotriazole and/or imidazole compounds) that suppress unwanted side reactions. These inhibitors prevent excessive organic residue generation and seam formation by controlling the chemical interactions between the polishing solution and the barrier layer, thereby improving flatness and reducing wiring resistance
Solution Approach 2:
The metal corrosion inhibitors act as intermediary substances that mediate between the polishing solution and the barrier layer. They control the chemical reactions at the interface, preventing harmful side effects such as seam generation and organic residue accumulation, while allowing the polishing process to proceed effectively
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces seam generation and organic residue on the substrate, improving the flatness and reliability of semiconductor devices by ensuring uniform polishing and minimizing defects.
Implementation Method 1
a metal corrosion inhibitor with a 1,2,3-triazolo[4,5-b]pyridine skeleton
Implementation Method 2
abrasive grains with a positive zeta potential
Implementation Method 3
a metal oxide solubilizer
Implementation Method 4
an oxidizing agent
Data Source
AI summary
The CMP polishing solution of the invention comprises (A) a metal corrosion inhibitor containing a compound with a 1,2,3-triazolo[4,5-b]pyridine skeleton, (B) an abrasive grain having a positive zeta potential in the CMP polishing solution, (C) a metal oxide solubilizer and (D) an oxidizing agent. The polishing method of the invention comprises a first polishing step in which the conductive substance layer of a substrate comprising an interlayer insulating filth having an elevated section and a trench at the surface, a barrier layer formed following the surface of the interlayer insulating film and the conductive substance layer formed covering the barrier layer, is polished to expose the barrier layer located on the elevated section of the interlayer insulating film, and a second polishing step in which the barrier layer exposed in the first polishing step is polished using the CMP polishing solution to expose the elevated section of the interlayer insulating film.