CMP Polishing Solution for Silicon Oxide Film Flatness
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Solution Overview
Problem
Conventional CMP polishing solutions for silicon oxide films often result in a rougher polished surface and inferior flatness due to their dependence on substrate surface conditions, limiting high polishing speeds, especially when dealing with substrates having convexo-concave structures.
Innovation Solution
A polishing solution comprising abrasive grains, a specific additive with a chemical structure featuring cyclic structures, carbon-carbon double bonds, and specific functional groups, and a 4-pyrone-based compound, which enhances interaction with the silicon oxide film, allowing for high polishing speeds regardless of substrate surface conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a high polishing speed is used for silicon oxide films, then productivity is improved, but the polished surface becomes rougher and flatness deteriorates
Solution Approach 1:
The invention changes the chemical composition parameters of the polishing solution by adding specific organic compounds (carboxylic acids, phenols, or their derivatives) to modify the interaction mechanism between the polishing solution and silicon oxide film. This chemical parameter change enables high polishing speed while maintaining surface flatness, resolving the contradiction between productivity and manufacturing precision.
2Productivity
If conventional polishing solutions are used on substrates with convexo-concave structures, then the polishing process can proceed, but the polishing speed decreases significantly
Solution Approach 1:
The invention modifies the chemical parameters of the polishing solution by incorporating organic compounds that enhance wetting and chemical interaction. This enables consistent high polishing speeds across different substrate surface conditions (flat and convexo-concave), improving both productivity and adaptability simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves a high polishing speed for silicon oxide films with improved flatness and reduced dependence on substrate surface conditions, suitable for both flat and convexo-concave substrates, including those with memory cells, by increasing the interaction between the polishing solution and the silicon oxide film.
Implementation Method 1
CMP technique is a technique in which a thin-film is formed on a substrate by chemical vapor deposition (CVD) or the like, and then the surface is flattened
Implementation Method 2
A substrate surface is polished by pressing the substrate against the polishing pad while supplying the polishing solution between the substrate surface and polishing pad
Data Source
AI summary
The polishing solution for CMP according to the invention comprises abrasive grains, an additive and water, and the polishing solution comprises an organic compound satisfying specified conditions as the additive. The polishing method of the invention is for polishing of a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.