CMP Polishing Solution for Silicon Oxide Film Flatness
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Solution Overview
Problem
Conventional CMP polishing solutions for silicon oxide films often result in inferior flatness and are unable to achieve high polishing speeds consistently, especially on substrates with convexo-concave surfaces, due to their dependence on substrate conditions.
Innovation Solution
A polishing solution comprising abrasive grains, 1,2-benzoisothiazole-3(2H)-one or 2-aminothiazole as a first additive, and a second additive with specific chemical structures such as uracil-6-carboxylic acid or catechol, which enhances interaction with the silicon oxide film to achieve high polishing speeds regardless of substrate conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional polishing solutions are used to achieve high polishing speed for silicon oxide films, then polishing speed is improved, but flatness of the polished surface deteriorates
Solution Approach 1:
The patent changes the chemical composition parameters of the polishing solution by introducing specific additives (1,2-benzoisothiazole-3(2H)-one or 2-aminothiazole as first additive, and compounds with specific chemical structures as second additive) to optimize the balance between polishing speed and flatness. This chemical parameter modification enables the solution to maintain high polishing speed while improving flatness control on silicon oxide films.
Solution Approach 2:
The patent creates a composite polishing solution formulation by combining abrasive grains with multiple chemical additives having different functions. The first additive (1,2-benzoisothiazole-3(2H)-one or 2-aminothiazole) and second additive (compounds with specific chemical structures) work synergistically with the abrasive grains to achieve both high polishing speed and improved flatness, resolving the contradiction between these two parameters.
2Productivity
If conventional polishing solutions are used on substrates with convexo-concave surfaces, then polishing can be performed, but polishing speed becomes inconsistent and decreases
Solution Approach 1:
The patent develops a universal polishing solution that maintains consistent high polishing speed across different substrate conditions (flat and convexo-concave surfaces). The combination of first and second additives provides multi-functional performance, enabling the solution to adapt to various substrate topographies without sacrificing polishing speed consistency, thereby reducing dependence on specific substrate conditions.
Solution Approach 2:
The patent modifies the chemical parameters of the polishing solution by adding specific compounds that enhance its adaptability to different substrate conditions. These additive compounds change the interaction characteristics between the polishing solution and the silicon oxide film, enabling consistent high-speed polishing regardless of whether the substrate surface is flat or has convexo-concave features.
3Manufacturing precision
If two-stage polishing is used to improve flatness, then manufacturing precision is improved, but production time increases
Solution Approach 1:
The patent merges the functions of rough polishing and finishing into a single polishing step by using a composite polishing solution containing both first and second additives. This unified approach combines the high polishing speed capability (typically associated with rough polishing) and the flatness improvement capability (typically associated with finishing) into one process, eliminating the need for separate two-stage polishing operations and reducing total production time.
Solution Approach 2:
The patent changes the chemical composition parameters of the polishing solution to enable it to perform both rough polishing and finishing functions simultaneously. The specific combination of first additive (1,2-benzoisothiazole-3(2H)-one or 2-aminothiazole) and second additive (compounds with specific chemical structures) creates a solution that can achieve both high material removal rate and improved flatness in a single step, thereby reducing production time while maintaining manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution allows for high-speed polishing of silicon oxide films with improved flatness and reduced dependence on substrate surface conditions, effectively addressing the limitations of conventional solutions.
Implementation Method 1
CMP technique is a technique in which a thin-film is formed on a substrate by chemical vapor deposition (CVD) or the like, and then the surface is flattened
Implementation Method 2
A substrate surface is polished by pressing the substrate against the polishing pad while supplying the polishing solution between the substrate surface and polishing pad
Data Source
AI summary
The polishing solution for CMP of the invention comprises abrasive grains, a first additive and water, wherein the first additive is at least 1,2-benzoisothiazole-3(2H)-one or 2-aminothiazole. The polishing method of the invention is a polishing method for a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.