CMP Polishing Composition with Porous Particles for Low-Defect Planarization

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Solution Overview

Problem

The challenge in semiconductor manufacturing is achieving a high polishing rate with minimal defects, such as dishing or erosion, during the chemical mechanical polishing (CMP) process, particularly due to the complex surface structures and varying interlayer film step differences.

Innovation Solution

A polishing composition with controlled Rps values (0.5 to 2) and specific surface area characteristics of polishing particles, including micropores and irregular shapes, is used to enhance contact and durability, reducing defect occurrence.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional polishing particles are used to achieve high polishing rate, then productivity is improved, but dishing and erosion defects increase

Engineering Contradiction:

Improvepolishing rateVSAvoidsurface flatness

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The polishing particles are designed with a porous structure containing micropores (0.003 to 0.2 cm³/g). This porous structure increases the specific surface area of the particles, providing more active polishing sites that enhance the polishing rate while the controlled pore distribution prevents excessive material removal that causes dishing and erosion.

Inventive Principle:

Principle #31Porous materials

Solution Approach 2:

The invention optimizes specific parameters of the polishing particles including micropore volume (0.003 to 0.2 cm³/g), specific surface area (20 to 80 m²/g), and particle size distribution (D10: 10-30 nm, D50: 30-60 nm, D90: 60-120 nm). These parameter optimizations balance the polishing rate with surface flatness control, preventing both dishing and erosion defects.

Inventive Principle:

Principle #35Parameter changes

2Productivity

If polishing particles with high surface area are used to increase contact, then polishing rate is improved, but particle stability decreases leading to more defects

Engineering Contradiction:

Improvepolishing rateVSAvoidparticle stability

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The polishing particles are composed of composite materials with controlled micropore structures. This composite structure provides both high specific surface area (20 to 80 m²/g) for enhanced polishing rate and sufficient mechanical strength to maintain particle stability during the polishing process, preventing particle fragmentation that would cause defects.

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The porous structure with controlled micropore volume (0.003 to 0.2 cm³/g) increases the surface area available for polishing while the controlled pore size and distribution maintain the structural integrity of the particles, ensuring they remain stable and do not fragment during use.

Inventive Principle:

Principle #31Porous materials

3Productivity

If polishing particles with irregular shapes are used to enhance contact, then polishing rate is improved, but manufacturing complexity increases

Engineering Contradiction:

Improvepolishing rateVSAvoidparticle structure complexity

Core Design Contradiction:

ProductivityVSDevice complexity

Solution Approach 1:

The invention controls the irregularity of particle shapes through parameter optimization rather than complex structural design. By controlling the micropore volume (0.003 to 0.2 cm³/g) and specific surface area (20 to 80 m²/g), the particles achieve enhanced contact and polishing rate while maintaining a relatively simple spherical or near-spherical outer shape that is easy to manufacture.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition achieves superior polishing rates with reduced defects by optimizing particle interaction and stability, ensuring stable and efficient planarization.

Implementation Method 1

an Rps value calculated by the following Formula 1 is 0.5 to 2: in [Formula 1], Ap is a specific surface area of a micropore of the polishing particles, and As is a specific surface area of an external surface of the polishing particles

Methodology Applied

Scientific EffectSurface area effect:

Implementation Method 2

slurry is supplied to a polishing pad while the substrate is pressed and rotated, and the surface is polished

Methodology Applied

Scientific EffectAbrasion: Abrasion

Implementation Method 3

a chemical mechanical polishing (CMP) process is used

Methodology Applied

Scientific EffectChemical mechanical polishing:

Data Source

PatentUS20260049239A1Polishing composition for semiconductor process and method for polishing substrate using same

Publication Date: 2026.02.19 YOUNG CHANG CHEMICAL CO LTD

AI summary

The polishing composition for semiconductor process includes polishing particles, wherein an Rps value calculated by the following Formula 1 is 0.5 to 2:Rps=ApAs[Formula⁢ 1]in [Formula 1], Ap is a specific surface area of a micropore of the polishing particles, and As is a specific surface area of an external surface of the polishing particles.