Dissolved-Gas Surface Treatment Composition for CMP Residue Removal
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Solution Overview
Problem
Existing surface treatment compositions for semiconductor substrates after chemical mechanical polishing (CMP) face challenges in achieving effective residue removal and storage stability, particularly due to insufficient storage stability and inadequate residue removal efficiency.
Innovation Solution
A composition containing a solvent and a dissolved gas at a concentration of 0.01 mg/L to 10 mg/L, which enhances residue removal through controlled foaming and foam breakage, while maintaining storage stability by limiting reactive gas concentrations and pH changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a water-soluble composition containing a specific chelating agent and an alkali component is used for cleaning semiconductor substrates, then residue removal capability is improved, but storage stability deteriorates
Solution Approach 1:
The invention changes the chemical composition parameters by replacing traditional chelating agents and alkali components with a peroxide-based system (hydrogen peroxide or organic peroxide) combined with a base component, achieving both effective residue removal and improved storage stability through controlled chemical reactivity
Solution Approach 2:
The invention employs strong oxidizing agents (hydrogen peroxide or organic peroxide) to enhance the cleaning effectiveness for removing residues, while the oxidation mechanism provides reliable residue removal without the storage stability issues associated with traditional chelating agents
2Reliability
If a composition with high residue removal effect is used, then cleaning performance is improved, but storage stability becomes insufficient
Solution Approach 1:
The composition is designed to remain relatively inert during storage (preliminary state) and activates the cleaning action only when applied to the substrate, where the peroxide-based system reacts with residues to provide effective cleaning without degrading during storage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively removes residues from semiconductor substrates post-CMP with improved storage stability, maintaining performance over time without significant degradation.
Implementation Method 1
the composition contains a solvent and a dissolved gas... enhances residue removal through controlled foaming and foam breakage
Data Source
AI summary
The present invention provides a means capable of improving a residue removing effect and improving storage stability in a composition for surface treatment which is used for reducing residues on a surface of an object to be polished after being polished chemical mechanical polishing. The present invention relates to a composition for surface treatment, wherein the composition contains a solvent and a dissolved gas, a concentration of the dissolved gas is 0.01 mg/L or more and 10 mg/L or less with respect to a total volume of the composition and the composition is used for reducing residues on a surface of an object to be polished after being polished by chemical mechanical polishing.