CMP Surface Treatment Composition for Residue Removal Without Etching
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Solution Overview
Problem
Existing cleaning compositions fail to sufficiently remove residues, such as abrasive grains and organic substances, from semiconductor substrates after chemical mechanical polishing (CMP), leading to contamination and reduced electrical reliability.
Innovation Solution
A surface treatment composition comprising a quaternary nitrogen-containing onium salt compound, a nonionic polymer, and an ammonium monocarboxylate buffer, with a pH greater than 7.0, effectively removes residues by electrostatic repulsion and suppresses etching rates on polished objects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional cleaning compositions are used after CMP, then the polishing process can be completed, but residues such as abrasive grains and organic substances remain on the substrate surface
Solution Approach 1:
The invention changes the chemical parameters of the cleaning composition by specifying a pH range of 2.0-11.0 and incorporating specific components (quaternary nitrogen-containing onium salt compound, nonionic polymer, and ammonium monocarboxylate buffer) to optimize residue removal effectiveness while maintaining substrate integrity
Solution Approach 2:
The invention uses a composite cleaning composition containing multiple functional components: quaternary nitrogen-containing onium salt compound (for electrostatic repulsion of residues), nonionic polymer (for adsorption and removal of organic substances), and ammonium monocarboxylate buffer (for pH stabilization), working synergistically to remove both inorganic and organic residues
2Manufacturing precision
If strong cleaning agents are used to remove residues, then surface cleanliness improves, but etching of the polished object increases
Solution Approach 1:
The invention optimizes the pH parameter within a specific range (2.0-11.0) and uses buffer components to maintain stable pH conditions, preventing excessive etching while ensuring effective residue removal through controlled chemical environments rather than aggressive cleaning conditions
Solution Approach 2:
The nonionic polymer acts as an intermediary that adsorbs residues and facilitates their removal through physical attachment and rinsing, reducing the need for aggressive chemical reactions that would cause etching of the substrate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition efficiently removes residues and reduces etching rates on semiconductor substrates, enhancing the reliability and performance of semiconductor devices.
Implementation Method 1
The composition efficiently removes residues and reduces etching rates on semiconductor substrates
Data Source
AI summary
A means capable of sufficiently removing residues remaining on the surface of a polished object is to be provided. The present invention relates to a surface treatment composition, containing components (A) to (C), and having pH of more than 7.0:the component (A): a quaternary nitrogen-containing onium salt compound having at least one of a linear or branched alkyl group having 7 or more carbon atoms and a linear or branched alkenyl group having 7 or more carbon atoms,the component (B): a nonionic polymer,the component (C): a buffer represented by a formula: A-COO−NH4+.