CMP Composition and Rinse for Laser Mark Protrusion Reduction
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Solution Overview
Problem
Existing chemical-mechanical polishing compositions and rinse compositions fail to effectively reduce protrusions on the fringe of hard laser marks and surface roughness, leading to increased haze and impacting semiconductor production yield.
Innovation Solution
A chemical-mechanical polishing composition and rinse composition are developed, incorporating a quaternary polyammonium salt, a quaternary ammonium salt with 6 or more carbon atoms, or an alkylated polymer with an amide structure, which are added to the composition to reduce protrusions and haze.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a conventional general polishing composition is used in the preliminary polishing step, then the polishing efficiency is improved, but a protrusion appears on the fringe of the hard laser mark
Solution Approach 1:
The patent applies parameter changes by carefully controlling the pH of the polishing composition within a specific range (8.5-10.5) and using a buffer system comprising a quaternary ammonium compound and a weak acid salt. This pH control prevents the chemical reactions that cause protrusion formation on laser mark fringes while maintaining adequate polishing efficiency. The buffer ratio and concentrations of polishing agents are optimized to achieve the desired balance between productivity and precision.
2Device complexity
If the surface roughness is not reduced appropriately, then the polishing process is simple, but the haze level increases and defect detection becomes difficult
Solution Approach 1:
The patent applies parameter changes by controlling the pH within a specific range (8.5-10.5) and using a buffer system with quaternary ammonium compounds and weak acid salts. These parameter adjustments optimize the chemical-mechanical polishing action to reduce surface roughness and haze levels, thereby improving defect detection capability without significantly complicating the polishing process.
3Device complexity
If the pH fluctuation is not suppressed, then the polishing composition is simple, but the protrusion on the hard laser mark fringe cannot be eliminated
Solution Approach 1:
The patent uses a buffer system comprising a quaternary ammonium compound and a weak acid salt as an intermediary to suppress pH fluctuation during polishing. This buffer system acts as a mediator that maintains stable pH conditions, preventing the chemical reactions that cause protrusion formation on laser mark fringes while keeping the composition relatively simple.
Solution Approach 2:
The patent applies parameter changes by controlling the pH within a specific range (8.5-10.5) and using a buffer system with quaternary ammonium compounds and weak acid salts. These parameter adjustments prevent protrusion formation by maintaining stable pH conditions during polishing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compositions effectively reduce protrusions on the fringe of hard laser marks and surface roughness, leading to improved substrate flatness, increased semiconductor production yield, and reduced haze levels, facilitating better defect detection and management.
Implementation Method 1
a quaternary polyammonium salt, a quaternary ammonium salt having 6 or more carbon atoms, or an alkylated polymer having an amide structure... eliminate a protrusion on the fringe of the hard laser mark
Implementation Method 2
chemical-mechanical polishing... abrasive... reduce surface roughness
Implementation Method 3
the pH fluctuation of the polishing composition in polishing can be suppressed favorably by effective utilization of the buffering action of the quaternary ammonium compound and the weak acid salt
Data Source
AI summary
Provided is a chemical-mechanical polishing composition comprising an abrasive, a basic component, at least one compound selected from the group consisting of a quaternary polyammonium salt, a quaternary ammonium salt having 6 or more carbon atoms, and an alkylated polymer having an amide structure, and an aqueous carrier; a rinse composition comprising the at least one compound and an aqueous carrier, as well as a method of chemically-mechanically polishing a substrate, and a method of rinsing a substrate, in which the respective compositions are used.