CMP Slurry Copolymer for Silicon Nitride Stopper Selectivity

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Solution Overview

Problem

In the CMP method, achieving high selectivity between metal wiring and barrier metals, and insulating materials, and silicon nitride stoppers is challenging, especially in complex LSI structures, due to the dominance of mechanical action over chemical action, which complicates precise polishing control.

Innovation Solution

A polishing method using a CMP slurry with a copolymer of anionic and hydrophobic monomers, abrasive grains with positive zeta potential, acids, and oxidizing agents, optimized to reduce the polishing rate of silicon nitride while maintaining high rates for metals and insulating materials, by forming a protective layer on the stopper and adjusting chemical and mechanical actions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If mechanical action is intensified to remove polishing object at high rate, then productivity is improved, but selectivity between stopper and polishing object deteriorates

Engineering Contradiction:
Improvepolishing rateVSAvoidselectivity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent changes the chemical parameters of the slurry by introducing a copolymer with specific functional groups (carboxyl, hydroxyl, or amine groups) that selectively interact with silicon nitride. This chemical modification allows the slurry to differentiate between the stopper and polishing objects, achieving high selectivity without requiring intensified mechanical action, thus resolving the contradiction between productivity and manufacturing precision.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The copolymer acts as an intermediary substance that mediates the interaction between the slurry and the silicon nitride stopper. The copolymer's functional groups selectively adsorb onto the stopper surface, forming a protective layer that prevents abrasive grains from directly contacting and removing the stopper, while allowing efficient removal of the polishing object. This intermediary mechanism enables simultaneous achievement of high polishing rate and high selectivity.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If conventional slurry is used for polishing metal and insulating material, then ease of manufacture is maintained, but adaptability to stopper polishing deteriorates

Engineering Contradiction:
Improveslurry formulation simplicityVSAvoidpolishing control accuracy
Core Design Contradiction:
Ease of manufactureVSAdaptability or versatility

Solution Approach 1:

The patent creates a composite slurry formulation by combining conventional polishing components (abrasive grains, solvents, pH adjusters) with a specifically designed copolymer. This composite approach maintains the ease of manufacture of conventional slurries while adding the adaptability needed for precise stopper polishing control. The copolymer component provides selective interaction with silicon nitride, enabling accurate polishing termination at the stopper interface.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The copolymer component provides multi-functionality: it serves as both a polishing enhancer for metal and insulating materials and a selective protective agent for silicon nitride stoppers. This universal additive allows a single slurry formulation to handle multiple polishing objectives with different requirements, improving adaptability without complicating the overall manufacturing process.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables high selectivity and accuracy in stopping polishing at the stopper, allowing for high processing accuracy and reduced processing time, applicable to complex semiconductor structures.

Implementation Method 1

the CMP slurry contains: (A) a copolymer of (a) a monomer that is anionic and does not contain a hydrophobic substituent, and (b) a monomer containing a hydrophobic substituent

Methodology Applied
Scientific EffectAdsorption: Adsorption

Implementation Method 2

an abrasive grain; the component (B) has a zeta potential of +10 mV or more in the CMP slurry

Methodology Applied
Scientific EffectElectrostatic interaction: Electrostatics

Implementation Method 3

the CMP slurry contains: (C) an acid; (D) an oxidizing agent

Methodology Applied
Scientific EffectOxidation: Oxidation

Implementation Method 4

a CMP method of polishing only the wiring metal such as described above is described in, for example, in Patent Literature 1

Methodology Applied
Scientific EffectChemical etching:

Data Source

PatentUS9299573B2Polishing method
Publication Date: 2016.03.29 RESONAC CORP
  • US9299573B2 patent drawing
  • US9299573B2 patent drawing
  • US9299573B2 patent drawing

AI summary

Provided is a polishing method that polishes a substrate having (1) silicon nitride as a stopper, and, on the stopper, (2) at least a portion of a wiring metal, and (3) at least a portion of an insulating material. The method includes a step of supplying a CMP slurry, and thereby polishing the (2) wiring metal and (3) insulating material. The CMP slurry contains (A) a copolymer of (a) a monomer that is anionic and does not contain a hydrophobic substituent and (b) a monomer containing a hydrophobic substituent; (B) an abrasive grain; (C) an acid; (D) an oxidizing agent; and (E) a liquid medium, the component (B) has a zeta potential of +10 mV or more in the CMP slurry, and the copolymerization ratio (a):(b) of the component (A) is 25:75 to 75:25 as a molar ratio, with the pH being 5.0 or less.