CMP Slurry Composition With Blocking Layer for Copper Corrosion
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Solution Overview
Problem
Chemical mechanical polishing (CMP) processes often result in corrosion of underlying conductive layers due to reactive slurry compositions, leading to material loss and performance issues in semiconductor fabrication.
Innovation Solution
Incorporating a precipitant in the CMP slurry composition that converts oxidized films into blocking layers, preventing the slurry from reacting with the underlying conductive layers and reducing corrosion by forming a protective barrier within the gap between conductive layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If reactive slurry composition is used for polishing, then polishing effectiveness is improved, but corrosion of underlying conductive layers occurs
Solution Approach 1:
The patent introduces a blocking layer as an intermediary between the reactive slurry and the underlying conductive layer. This blocking layer is formed by reacting a precipitant with the conductive layer material, creating a protective barrier that allows the slurry to perform its polishing function without causing harmful corrosion of the conductive layer beneath.
Solution Approach 2:
The patent applies preliminary anti-action by forming a protective blocking layer on the conductive layer before the reactive slurry contacts it. The precipitant is applied in advance to create this protective barrier, which prevents the subsequent harmful chemical reaction between the slurry and the conductive layer, thereby counteracting the potential damage before it occurs.
2Manufacturing precision
If slurry reacts with conductive layers, then material removal is achieved, but material loss and performance issues occur
Solution Approach 1:
The blocking layer serves as a mediator that enables controlled material removal while preserving layer integrity. It allows the polishing process to proceed effectively by providing a reaction interface, while simultaneously protecting the underlying conductive layer from excessive material loss and maintaining its structural integrity for reliable device performance.
Solution Approach 2:
The patent applies local quality by creating a blocking layer with specific properties tailored for the interface between the slurry and conductive layer. This localized treatment provides the necessary protection and controlled reactivity at the critical interface region, allowing different parts of the structure to have different functional properties - the blocking layer at the interface and the intact conductive layer beneath.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of a precipitant in the CMP slurry effectively blocks the slurry from corroding the underlying conductive layers, maintaining layer integrity and enhancing the reliability and performance of semiconductor structures during polishing.
Implementation Method 1
a precipitant is caused to flow into the gap between the second conductive layer and the dielectric layer. The precipitant is configured to convert an oxidized film of the first conductive layer into a blocking layer on the exposed surface of the first conductive layer
Implementation Method 2
The slurry includes a liquid carrier and an oxidizer
Data Source
AI summary
A semiconductor structure includes: a first conductive layer arranged over a substrate; a dielectric layer arranged over the first conductive layer; a second conductive layer arranged within the dielectric layer and electrically connected to the first conductive layer, the second conductive layer including a sidewall distant from the dielectric layer by a width; and a first blocking layer over a surface of the first conductive layer between the second conducive layer and the dielectric layer. The first blocking layer includes at least one element of a precipitant.