CMP Slurry Composition for High-Rate Boron Silicon Polishing
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Solution Overview
Problem
Conventional CMP slurry compositions struggle to effectively polish boron silicon compounds due to their high mechanical strength and chemical stability, leading to low removal rates and difficulties in manufacturing high-integration semiconductor devices.
Innovation Solution
A CMP slurry composition comprising a catalyst, abrasive, and pH adjuster, with optional oxidizer, is developed to enhance the polishing efficiency of boron silicon compounds through hydrolysis induced by OH/O radicals and Si-O bonding formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If conventional CMP slurry is used to polish boron silicon compound, then the chemical stability of boron silicon compound is maintained, but the polishing removal rate becomes low
Solution Approach 1:
The patent changes the chemical parameters of the CMP slurry by introducing specific catalysts (Fe, Cu, Ce, Cr, Co, Mn, Mo, Ru, Ti, or V), oxidizers (H2O2, periodic acid, periodate salt, perbromic acid, perbromate salt, perchloric acid, perborate salt, or permanganate), and pH adjusters to create a reactive environment that overcomes the chemical stability of boron silicon compound, enabling effective polishing while maintaining material integrity
Solution Approach 2:
The patent introduces catalysts and oxidizers as intermediary substances that mediate between the CMP slurry and the boron silicon compound. These intermediaries facilitate chemical reactions that weaken the strong Si-O and B-O bonds in the boron silicon compound, making it susceptible to mechanical removal by abrasive particles without directly attacking the stable compound structure
2Reliability
If boron silicon compound is used as hard mask material, then the etching process stability is improved, but the CMP removal difficulty increases
Solution Approach 1:
The patent modifies the chemical environment parameters for CMP processing by using catalysts and oxidizers to create conditions that selectively react with boron silicon compound, transforming its resistance to removal into susceptibility to controlled chemical-mechanical polishing while preserving its etching performance characteristics
3Productivity
If catalyst and oxidizer are added to CMP slurry, then the polishing efficiency is improved, but the slurry composition complexity increases
Solution Approach 1:
The patent employs multi-functional catalysts and oxidizers that simultaneously perform multiple roles: activating the slurry chemistry, facilitating bond breaking in boron silicon compound, and enabling abrasive action. This multi-functionality reduces the need for multiple separate additives, managing composition complexity while achieving high polishing efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition significantly improves the removal rate of boron silicon compounds, enabling efficient manufacturing of high-integration semiconductor devices by facilitating the removal of boron silicon compounds in semiconductor device manufacturing processes.
Implementation Method 1
hydrolysis induced by OH/O radicals
Implementation Method 2
a catalyst
Implementation Method 3
an oxidizer
Implementation Method 4
an abrasive
Data Source
AI summary
A CMP slurry composition for polishing a boron silicon (B—Si) compound may include a catalyst, an abrasive including a plurality of particles and being configured to polish the boron silicon (B—Si) compound, and a pH adjuster. The CMP slurry composition may further include an oxidizer. The catalyst may have a binary catalyst configuration comprising a first catalyst material and a second catalyst material. The first catalyst material may include Fe, and the second catalyst material may include Cu. The oxidizer may include hydrogen peroxide (H2O2). A CMP (chemical mechanical polishing) method for a boron silicon (B—Si) compound may include providing a substrate structure including a thin film formed of the boron silicon (B—Si) compound and performing a CMP process on the thin film. The CMP process is performed by using the CMP slurry composition.