CMP Slurry Complexing Agents Prevent Oxidizer Penetration
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
During the chemical mechanical polishing (CMP) process for metal interconnect structures, oxidizers in the slurry can penetrate through the interface between the metal interconnects and the inter-metal dielectric layer, causing oxidation and corrosion of underlying metal lines, especially in sub-10 nm technologies where space constraints and material differences between interconnects and lines exacerbate this issue.
Innovation Solution
Incorporating complexing agents into the CMP slurry to form oxidizer assemblies with larger sizes or altered surface charges, preventing these assemblies from penetrating through the interface and protecting the underlying metal lines, while maintaining the pH balance and adjusting surface pressure to compensate for potential removal rate decreases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If oxidizers are used in CMP slurry to remove metal film, then metal removal efficiency is improved, but underlying metal lines are oxidized and corroded due to penetratio
Solution Approach 1:
The patent introduces an intermediary substance (e.g., polymer coating, silane-based coating, or organic-inorganic hybrid coating) applied to the underlying metal lines before CMP processing. This intermediary layer acts as a barrier that prevents oxidizers in the CMP slurry from penetrating through the interface and reaching the metal lines, while still allowing the CMP process to effectively remove the metal interconnect structure. The intermediary layer is subsequently removed after CMP completes its function.
2Volume of moving object
If space constraints are reduced in sub-10 nm technologies, then device density is improved, but oxidizer penetration and corrosion risk increase
Solution Approach 1:
The patent applies preliminary protective measures by depositing an intermediary coating layer on the underlying metal lines before the CMP process begins. This preliminary action creates a protective barrier that counteracts the harmful oxidizer penetration that would otherwise occur due to reduced spacing in sub-10 nm technologies. The protective layer is designed to withstand the CMP process and is removed afterward, having successfully prevented corrosion during the high-density manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The oxidizer assemblies effectively prevent oxidation and corrosion of underlying metal lines, ensuring reliable connections and reducing manufacturing defects by inhibiting oxidizer penetration, thus enhancing the integrity of metal interconnects in advanced technology nodes.
Implementation Method 1
The CMP slurry includes an oxidizer assembly that includes an oxidizer and a complexing agent bound to the oxidizer through a non-covalent force
Implementation Method 2
The metal CMP process utilizes a CMP slurry that includes a mechanical abrasion component, an oxidant(s) (or oxidizer(s)) and optional chemical metal etching component(s). The additional metal film is oxidized by the oxidant(s) so that the oxidized metal film can be removed by mechanical abrasion and/or chemical etching.
Implementation Method 3
The CMP slurry includes a mechanical abrasion component... The additional metal film is oxidized by the oxidant(s) so that the oxidized metal film can be removed by mechanical abrasion
Data Source
AI summary
The current disclosure describes a metal surface chemical mechanical polishing technique. A complex agent or micelle is included in the metal CMP slurry. The complex agent bonds with the oxidizer contained in the CMP slurry to form a complex, e.g., a supramolecular assembly, with an oxidizer molecule in the core of the assembly and surrounded by the complex agent molecule(s). The formed complexes have an enlarged size.