CMP Slurry Composition for Oxide Selectivity and Dishing Control
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Solution Overview
Problem
The challenge in semiconductor manufacturing is to achieve a high polishing rate for insulating films while inhibiting the polishing of polysilicon films, maintaining selectivity, and preventing dishing during the CMP process.
Innovation Solution
A polishing slurry composition comprising a non-ionic macromolecule polymer with at least one amide bond, a selectivity control agent, and abrasive particles, which together provide a high polishing rate for insulating films, inhibit polysilicon film polishing, and offer a polishing stop function to prevent dishing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If polishing selectivity for insulating film is increased, then polishing rate of insulating film is improved, but dishing occurs in the insulating film
Solution Approach 1:
The patent modifies the chemical composition parameters of the polishing slurry by incorporating specific organic acids (benzoic acid, phenylacetic acid, naphthoic acid, mandelic acid, or picolinic acid) at controlled concentrations (0.01-5 wt%). This chemical parameter change enables the slurry to achieve high polishing rates for insulating films while simultaneously controlling dishing through the selective chemical interaction of these acids with different film materials during the CMP process.
2Reliability
If polishing selectivity is increased to protect polysilicon film, then polysilicon film loss is reduced, but insulating film may be excessively polished leading to dishing
Solution Approach 1:
The patent introduces organic acids as intermediary substances that mediate between the abrasive particles and the film materials. These organic acids selectively interact with the insulating film and polysilicon film through chemical mechanisms, enabling the abrasive particles to remove insulating film efficiently while automatically reducing their effectiveness on polysilicon film, thus providing both high selectivity and dishing control without requiring extreme polishing parameter adjustments.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively reduces polysilicon film loss during excessive polishing, minimizes dishing in insulating films, and achieves high planarization enhancement, thereby enhancing the reliability and characteristics of semiconductor devices.
Implementation Method 1
a non-ionic (macromolecule) polymer having at least one amide bond
Implementation Method 2
a selectivity control agent
Implementation Method 3
abrasive particles
Data Source
AI summary
The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises: a nonionic polymer having at least one amide bond; a selectivity control agent; and abrasive particles.