CMP Slurry Composition With Cationic Surfactant Corrosion Barrier

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Solution Overview

Problem

Chemical mechanical polishing (CMP) processes can cause corrosion of underlying conductive layers due to reactive slurry interactions, leading to performance and reliability issues in integrated circuits.

Innovation Solution

A slurry composition is developed that includes a cationic surfactant with a nitrogen atom, which forms a hydrophobic film on the exposed surfaces of conductive layers, preventing corrosion by repelling the slurry and maintaining the integrity of the underlying layers during polishing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a reactive slurry is used for polishing, then polishing effectiveness is improved, but corrosion of underlying conductive layers occurs

Engineering Contradiction:

Improvepolishing effectivenessVSAvoidcorrosion of conductive layers

Core Design Contradiction:

ProductivityVSObject-affected harmful factors

Solution Approach 1:

A block layer comprising a cationic surfactant with at least one nitrogen atom is introduced as an intermediary between the reactive slurry and the underlying conductive layer. The cationic surfactant forms a hydrophobic film that acts as a barrier, preventing direct contact between the reactive slurry and the conductive layer, thus eliminating corrosion while preserving polishing effectiveness

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The block layer is formed in advance before the polishing process to prevent corrosion. The cationic surfactant is applied to create a protective film on the conductive layer surface prior to slurry contact, proactively counteracting the harmful corrosive effects of the reactive slurry

Inventive Principle:

Principle #9Preliminary anti-action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The use of a cationic surfactant in the slurry composition effectively blocks the conductive layer from corrosion, enhancing the stability and reliability of the CMP process by reducing material loss and ensuring consistent polishing performance.

Implementation Method 1

The cationic surfactant having at least one nitrogen atom in the molecule comprises an alkylated amine, an alkoxylated amine, an alkylated nitrogen-containing heterocyclic compound, an alkoxylated nitrogen-containing heterocyclic compound, or a mixture thereof. The cationic surfactant forms a hydrophobic film on the exposed surfaces of the conductive layer, preventing corrosion by repelling the slurry

Methodology Applied

Scientific EffectHydrophobic film formation: Hydrophobe

Data Source

PatentUS20250313723A1Composition and method for polishing and integrated circuit

Publication Date: 2025.10.09 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A slurry composition, a polishing method and an integrated circuit are provided. The slurry composition includes a slurry and at least one cationic surfactant having at least one nitrogen atom in the molecule. The slurry includes at least one liquid carrier, at least one abrasive and at least one pH adjusting agent, and has a pH of less than 7.0. The polishing method includes using the slurry composition with the cationic surfactant to polish a conductive layer. The integrated circuit comprises a block layer comprising the cationic surfactant between a sidewall of the conductive plug and an interlayer dielectric layer.