CMP Slurry Corrosion Inhibitor for Copper Polishing Flatness
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Solution Overview
Problem
Current CMP slurry compositions face a trade-off between polishing rate and flatness when polishing copper layers, with triazole or tetrazole compounds offering anticorrosion but at the cost of reduced polishing rate.
Innovation Solution
A compound represented by Formula 1, or its salt, is used as a corrosion inhibitor in a CMP slurry composition, which includes a polar or non-polar solvent, an abrasive agent, and a complexing or oxidizing agent, to minimize reduction in polishing rate while improving polishing flatness by reducing erosion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If triazole or tetrazole compounds are used as corrosion inhibitors in large amounts, then anticorrosion performance is improved, but polishing rate decreases
Solution Approach 1:
The patent changes the chemical structure parameters of the corrosion inhibitor by introducing specific substituent groups (AZ1, AZ2 with nitrogen atoms in heterocyclic rings) and variable parameters (n, m integers from 0 to 2) to optimize both anticorrosion performance and polishing rate. This structural modification allows the compound to maintain protective function while reducing negative impact on polishing rate.
Solution Approach 2:
The patent creates a composite corrosion inhibitor system combining multiple heterocyclic groups (triazole, tetrazole, benzotriazole, naphthotriazole) with specific substituent patterns. This composite molecular structure integrates the benefits of different heterocyclic systems to achieve balanced performance in both corrosion inhibition and polishing rate maintenance.
2Manufacturing precision
If amount of corrosion inhibitor is increased to improve polishing flatness, then polishing flatness is improved, but polishing rate decreases
Solution Approach 1:
The patent optimizes the concentration parameter of the corrosion inhibitor within a specific range (0.01 wt% to 5 wt%) and modifies molecular structure parameters (substituent types, nitrogen atom positions) to achieve the dual goal of improving polishing flatness while minimizing the reduction in polishing rate.
3Manufacturing precision
If size or amount of abrasive particles is reduced to improve polishing flatness, then polishing flatness is improved, but polishing rate decreases
Solution Approach 1:
The patent changes the particle size parameter of abrasive materials to an optimized range (0.01 μm to 1 μm) and combines this with modified corrosion inhibitor structures to achieve improved polishing flatness while maintaining acceptable polishing rates through the synergistic effect of particle size optimization and enhanced corrosion inhibition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The CMP slurry composition with the compound achieves improved polishing flatness and rate, maintaining a high polishing rate while reducing erosion, as demonstrated in the examples compared to compositions without this compound.
Implementation Method 1
the compound or the salt thereof may be used as a corrosion inhibitor in a CMP composition
Implementation Method 2
an abrasive agent
Data Source
AI summary
A compound or a salt thereof, a CMP slurry composition including the same, and a polishing method using the same, the compound being represented by Formula 1,