CMP Slurry Composition With Iodine Control and Adsorbent Protection
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Solution Overview
Problem
The increasing miniaturization of semiconductor device metal wiring layers requires a slurry composition that maintains flatness while reducing chemical mechanical polishing time and prevents apparatus contamination during the process.
Innovation Solution
A slurry composition incorporating abrasive particles, deionized water, a temperature-sensitive iodine-based oxidizer, and an adsorbent, such as zeolite, which controls the static etch and removal rates of metal films within a specific temperature range and adsorbs iodine to prevent contamination of the polishing apparatus.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional slurry composition is used for chemical mechanical polishing of metal films, then the polishing process can be performed, but the flatness of metal films deteriorates and polishing time increases
Solution Approach 1:
The patent employs temperature-sensitive oxidizers that change their oxidation potential based on polishing temperature, enabling dynamic control of etch rate and removal rate. This parameter change allows the slurry to adapt to temperature variations during polishing, maintaining optimal flatness and removal rate across different polishing conditions without requiring separate slurry formulations for different stages.
Solution Approach 2:
The slurry composition combines multiple functional components including abrasive particles, temperature-sensitive oxidizers, adsorbents, and pH adjusting agents in a synergistic formulation. This composite material approach allows simultaneous achievement of controlled etching, high removal rate, and apparatus contamination prevention through the combined effects of different components working together.
2Productivity
If oxidizer is used to increase removal rate, then polishing efficiency improves, but discoloration and contamination of polishing apparatus occurs
Solution Approach 1:
The patent converts the potentially harmful effect of iodine-based oxidizer discoloration into a beneficial outcome by using adsorbents to selectively capture and remove the discoloring species from the slurry. The iodine that would otherwise cause apparatus contamination is instead utilized for its temperature-sensitive oxidation properties, while the adsorbent component neutralizes its harmful side effects.
Solution Approach 2:
Adsorbent materials serve as intermediary substances between the iodine-based oxidizer and the polishing apparatus. These intermediaries selectively bind to iodine species, preventing direct contact between the oxidizer and apparatus surfaces that would cause discoloration, while still allowing the oxidizer to perform its function on the metal film.
3Productivity
If polishing temperature is increased to reduce polishing time, then productivity improves, but control over etch rate and removal rate becomes difficult
Solution Approach 1:
The patent introduces dynamic adaptability to the slurry composition through temperature-sensitive oxidizers whose oxidation potential automatically adjusts with temperature changes. This dynamic response allows the system to maintain controlled etch and removal rates across a wide temperature range (5°C to 100°C), enabling high-speed polishing without sacrificing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition improves the flatness of metal films by controlling etch and removal rates, reduces polishing time, and prevents discoloration and contamination of the chemical mechanical polishing apparatus by effectively managing iodine generation.
Implementation Method 1
the oxidizer including iodine is a temperature-sensitive oxidizer capable of controlling both a static etch rate and a removal rate of the metal film
Implementation Method 2
the adsorbent is an adsorbent capable of adsorbing iodine generated from the oxidizer
Data Source
AI summary
The present disclosure relates to slurry compositions used for chemical mechanical polishing of a metal film. An example slurry composition includes abrasive particles, deionized water, and an oxidizer. The oxidizer includes iodine, and is a temperature-sensitive oxidizer capable of controlling both a static etch rate and a removal rate of the metal film when a polishing temperature during the chemical mechanical polishing is about 5° C. to about 100° C.