CMP Slurry with Photoreactive Coating for Step Removal

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Solution Overview

Problem

Conventional chemical mechanical polishing (CMP) processes face challenges in effectively removing steps on wafers due to insufficient control over process parameters, which complicates the increasing complexity of semiconductor technology development.

Innovation Solution

A slurry composition for chemical mechanical polishing is developed, comprising an abrasive with a metal oxide polishing particle and a photoreactive coating layer, along with a photoinitiator. This composition undergoes polymerization when irradiated with light, leading to agglomeration of abrasives and enhanced ability to remove steps on wafers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional process control parameters (pressure, speed, temperature) are optimized, then polishing process control is improved, but the ability to remove steps on wafers is insufficient

Engineering Contradiction:
Improvepolishing process controlVSAvoidstep removal ability
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The invention changes the chemical and physical parameters of the polishing slurry by incorporating photoreactive monomers/oligomers that undergo polymerization upon light irradiation. This transforms the slurry from a conventional mechanical abrasive into a photo-responsive system where abrasives can be dynamically agglomerated or dispersed based on light exposure, enabling superior step removal capability while maintaining process control

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention uses composite abrasive particles consisting of metal oxide cores coated with photoreactive monomer or oligomer layers. This composite structure combines the mechanical polishing capability of metal oxides with the photo-responsive properties of the coating, creating a dual-function abrasive that enables both precise process control and enhanced step removal

Inventive Principle:
Principle #40Composite materials

2Ease of manufacture

If slurry composition is simplified for ease of manufacture, then manufacturing cost is reduced, but polishing performance deteriorates

Engineering Contradiction:
Improveslurry composition simplicityVSAvoidpolishing performance
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The invention modifies the chemical composition parameters of the slurry by incorporating photoreactive monomers or oligomers along with photoinitiators. These compositional changes enable photo-induced polymerization that agglomerates abrasives, significantly enhancing polishing performance and step removal ability while maintaining relatively straightforward slurry formulation and manufacturing processes

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The use of the slurry composition significantly improves polishing performance by enhancing the ability to remove steps on wafers, thereby ensuring excellent planarization and contributing to the advancement of semiconductor technology.

Implementation Method 1

the slurry composition undergoes polymerization when irradiated with light

Methodology Applied
Scientific EffectPhotopolymerization: Photopolymerisation

Data Source

PatentUS20250043149A1Slurry composition for chemical mechanical polishing and chemical mechanical polishing apparatus
Publication Date: 2025.02.06 SAMSUNG ELECTRONICS CO LTD
  • US20250043149A1 patent drawing
  • US20250043149A1 patent drawing
  • US20250043149A1 patent drawing

AI summary

Provided are a slurry composition for chemical mechanical polishing including: an abrasive including a polishing particle and a coating layer surrounding the polishing particle; and a photoinitiator, wherein the polishing particle includes a metal oxide, and wherein the coating layer includes a photoreactive monomer or oligomer, and a chemical mechanical polishing apparatus.