Carbon Nanotube Bolometer Gate Voltage Control for High TCR
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Achieving a high temperature coefficient of resistance (TCR) in bolometers is challenging, particularly when targeting specific voltage values.
Innovation Solution
A bolometer design that includes a gate electrode, a drain electrode, a source electrode, and a first film connecting the drain and source electrodes, containing a carbon nanotube. The gate voltage is set between a first upper limit value and a first lower limit value when the drain voltage is negative, with the first upper limit value being the gate voltage at which the drain current is at a minimum, and the first lower limit value calculated using specific equations to maximize the TCR.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a gate voltage is applied to control the Fermi energy position in the channel part, then the TCR value can be controlled, but it may be difficult to achieve a high TCR depending on the target voltage value
Solution Approach 1:
The patent applies parameter changes by systematically varying the gate voltage to different regions (first region with first polarity, second region with second polarity, third region with first polarity) to control the Fermi energy position and optimize TCR. By changing the gate voltage parameters across different operational regions, the invention achieves high TCR values while maintaining ease of operation through defined voltage ranges.
2Measurement precision
If the gate voltage is adjusted to control the drain current, then the detection performance can be improved, but the device complexity increases due to multiple voltage control requirements
Solution Approach 1:
The patent segments the gate voltage control into distinct operational regions: a first region with first polarity gate voltage, a second region with second polarity gate voltage, and a third region with first polarity gate voltage. This segmentation simplifies the control complexity by defining clear operational zones rather than requiring continuous adjustment, while still achieving improved infrared detection performance through optimized TCR in each region.
Solution Approach 2:
The patent implements dynamic gate voltage control by switching between different polarity regions based on operational requirements. The gate voltage dynamically transitions between first polarity (for high TCR operation) and second polarity (for other operational needs), allowing the device to adapt its detection characteristics while maintaining manageable control complexity through defined switching criteria.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for easy achievement of a high TCR, enhancing the detection performance of the bolometer by applying a gate voltage near the optimal value for maximizing the absolute value of TCR.
Implementation Method 1
a first film that connects the drain electrode and the source electrode and includes a carbon nanotube... the gate voltage is set between a first upper limit value and a first lower limit value... the first upper limit value is the gate voltage when a drain current of the drain electrode is at a minimum
Implementation Method 2
a gate electrode to which a gate voltage is configured to be applied... controlling the position of the Fermi energy in the channel part containing a CNT
Data Source
AI summary
A bolometer of the disclosure includes a gate electrode to which a gate voltage is configured to be applied, a drain electrode to which a drain voltage is configured to be applied, a source electrode, and a first film that connects the drain electrode and the source electrode and includes a carbon nanotube, in which, when the drain voltage is negative, the gate voltage is set between a first upper limit value and a first lower limit value, the first upper limit value is the gate voltage when a drain current of the drain electrode is at a minimum.