CNT Hard Mask Composition for Semiconductor Etching
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in forming fine patterns with high etching durability and controlled thickness in hard mask layers, which are essential for highly integrated and scaled semiconductor devices.
Innovation Solution
A hard mask composition comprising a mixture of first and second carbon nanotubes (CNTs) with different lengths and a dispersing agent, where the total mass of the first CNTs is 1 to 2.5 times that of the second CNTs, is used to form a uniform hard mask layer with improved etching durability and pattern formation capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a hard mask layer is used to endure etching process for transferring patterns, then etching durability is improved, but control of the thickness of the hard mask layer becomes difficult
Solution Approach 1:
The patent uses a composite material consisting of carbon nanotubes with different lengths (first CNTs and second CNTs with length ratio of 1:3 or more) combined with a dispersing agent to form a hard mask composition. This composite structure provides both high etching durability and improved thickness controllability, resolving the contradiction between durability and precision.
Solution Approach 2:
The patent changes the physical parameters of the hard mask material by using carbon nanotubes with specific length ratios (1:3 or more between short and long CNTs) and controlled mass ratios (total mass of first CNTs is 1 to 2.5 times the total mass of second CNTs). These parameter changes enable both high etching durability and precise thickness control during the coating process.
2Manufacturing precision
If fine patterns are formed on the hard mask layer, then manufacturing precision is improved, but etching durability may be compromised
Solution Approach 1:
The dual-component carbon nanotube composite provides a balance between forming fine patterns and maintaining etching durability. The combination of short and long CNTs creates a structure that can be precisely patterned while retaining sufficient material density to withstand the etching process.
Solution Approach 2:
The carbon nanotube composite provides different properties at different scales: at the nanoscale, the CNT structure allows for fine pattern formation, while at the macroscopic level, the composite structure maintains overall etching durability through the synergistic combination of CNTs with different lengths.
Data Source
AI summary
A manufacturing method of a semiconductor device includes forming a hard mask layer on a semiconductor substrate using a hard mask composition. Hard mask patterns are formed by patterning the hard mask layer. Semiconductor patterns are formed by etching the semiconductor substrate using the hard mask patterns. The hard mask composition includes a plurality of first carbon nanotubes (CNTs) having a first length, a plurality of second CNTs having a second length, which is at least 3 times the first length, and a dispersing agent in which the first CNTs and the second CNTs are dispersed. The total mass of the first CNTs is 1 to 2.5 times the total mass of the second CNTs.