Asymmetric Carbon Nanotube TFT Channel Doping for Low Off-Current
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Solution Overview
Problem
Carbon nanotube thin film transistors face challenges with high turn-off state current and bipolar property due to their small band gap, leading to inefficient switching ratios and unsuitability for large-scale integrated circuits, especially when using high-k and thin gate dielectrics.
Innovation Solution
The use of one-dimensional semiconductor nano materials with asymmetrically doped active layers, where the second channel region has a higher doping concentration than the first channel region, regulating energy levels to suppress bipolar properties and reduce turn-off state current, achieved by doping with triethyloxonium hexachloroantimonate or yttrium oxide.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If carbon nanotube thin film transistors use high-k and thin gate dielectrics, then device performance is improved, but turn-off state current increases and bipolar property occurs
Solution Approach 1:
The patent applies local quality by creating asymmetric doping in different regions of the carbon nanotube channel. The first channel region has different doping concentration than the second channel region, allowing localized control of energy levels to suppress bipolar property while maintaining overall device performance with high-k gate dielectric
Solution Approach 2:
The patent changes physical parameters by introducing asymmetric doping concentrations in different channel regions. This modifies the energy level distribution locally, creating energy level differences that suppress carrier tunneling and bipolar effect, thereby improving switching ratio while maintaining high device performance
2Reliability
If asymmetric doping is applied to the active layer, then turn-off state current is reduced and bipolarity is suppressed, but manufacturing complexity increases
Solution Approach 1:
The patent segments the active layer into distinct doped regions (first channel region and second channel region) with different doping concentrations. This segmentation allows independent control of energy levels in different regions, achieving bipolar suppression while providing a systematic manufacturing approach
Solution Approach 2:
The patent applies preliminary action by pre-doping the carbon nanotube active layer with different concentrations in different regions before device assembly. This preliminary asymmetric doping establishes the required energy level differences upfront, simplifying subsequent manufacturing steps while achieving the desired electrical characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the performance of thin film transistors by increasing the turn-on state current while reducing the turn-off state current and suppressing bipolarity, improving the current switching ratio and making the devices more suitable for integrated circuits.
Implementation Method 1
the second channel region is a first doped region, and an energy level of the second channel region is different from an energy level of the first channel region corresponding to the energy level of the second channel region
Implementation Method 2
achieved by doping with triethyloxonium hexachloroantimonate or yttrium oxide
Data Source
AI summary
A thin film transistor and manufacturing method thereof, an electronic device are provided, which includes: a gate electrode, a gate insulation layer, an active layer, a first electrode and a second electrode are on a base substrate, the active layer made of a one-dimensional semiconductor nano material includes a first electrode region, a second electrode region, a first channel region, a second channel region; the first electrode region and the second electrode region are in contact with the first electrode and the second electrode respectively, the first channel region is directly connected with the first channel region and the second channel region respectively, the second channel region is a first doped region and between the first electrode region and the second electrode region; an energy level of the second channel region is different from that of the first channel region corresponding to the energy level of the second channel region.