Carbon Nanotube Thin Film Transistor with Floating Electrodes
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Solution Overview
Problem
Conventional carbon nanotube transistors are limited to low drain-source voltage applications due to a Schottky barrier modulation that becomes negligibly smaller at high voltages, resulting in weak semiconductor properties and poor on/off voltage ratios.
Innovation Solution
A thin film transistor design incorporating carbon nanotube patterns separated by floating electrodes, which maintain on/off characteristics even at high drain-source voltages by minimizing Schottky barrier deterioration through multiple energy bands and improved voltage transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional carbon nanotube transistors are used, then the device can operate at low drain-source voltage, but the semiconductor property becomes weak and on/off voltage ratio decreases when high drain-source voltage is applied
Solution Approach 1:
The channel is divided into multiple segments by introducing floating electrodes that partition the continuous carbon nanotube channel into distinct regions. This segmentation creates multiple Schottky barrier interfaces, ensuring that at least one barrier maintains effective modulation even when others are compromised by high voltage, thereby preserving overall transistor switching characteristics at high drain-source voltages
Solution Approach 2:
Floating electrodes are introduced as intermediary elements within the channel structure. These floating electrodes create additional Schottky barriers that act as mediators to maintain voltage control and semiconductor properties. The floating electrodes serve as intermediate potential barriers that prevent direct high-voltage degradation of the carbon nanotube-channel interface, preserving on/off characteristics
2Device complexity
If conventional carbon nanotube transistors are used, then the structure is simple, but the device cannot distinguish on and off states with significant current ratios at high voltages
Solution Approach 1:
The channel is divided into multiple segments by introducing floating electrodes that partition the continuous carbon nanotube channel into distinct regions. This segmentation creates multiple Schottky barrier interfaces, ensuring that at least one barrier maintains effective modulation even when others are compromised by high voltage, thereby preserving overall transistor switching characteristics at high drain-source voltages
Solution Approach 2:
The invention changes the electrical parameters within the channel by introducing floating electrodes that create multiple potential barriers. This parameter modification ensures that the voltage distribution and Schottky barrier characteristics are optimized to maintain significant current ratios between on and off states even under high drain-source voltage conditions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the use of carbon nanotube transistors as switching elements in high voltage applications, such as display devices, by distinguishing on and off states with significant current ratios, even at voltages exceeding 10V, thereby expanding their application range.
Implementation Method 1
at least one floating electrode connecting the carbon nanotube patterns to each other
Implementation Method 2
a Schottky barrier generated between the carbon nanotube and an electrode becomes a lot thinner when an applied voltage is very large and, as a result, a Schottky barrier modulation according to a gate voltage becomes negligibly smaller
Data Source
AI summary
A thin film transistor includes a gate electrode configured to receive a control voltage, a source electrode insulated from the gate electrode, and configured to receive an input voltage, a drain electrode insulated from the gate electrode, and configured to receive an output voltage, at least two carbon nanotube patterns formed in a channel region between the source electrode and the drain electrode, wherein the carbon nanotube patterns are separated from each other, and at least one floating electrode connecting the two carbon nanotube patterns to each other.