Carbon Nanotube Wire Composition for Low-Resistivity Conductors

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Solution Overview

Problem

Conventional carbon nanotube aggregates exhibit higher resistivity compared to copper and aluminum, limiting their suitability as wire materials, and there is a need for further reduction in resistivity to meet the demands of advanced industrial applications.

Innovation Solution

A carbon nanotube aggregate with a high proportion of two- or three-walled carbon nanotubes, optimized doping with specific elements like nitric acid, iodine, and other dopants, and a carbon nanotube composite material with an embedded element, such as lithium, to enhance conductivity and reduce resistivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Weight of moving object

If carbon nanotubes are used as wire materials to reduce weight, then weight is reduced, but resistivity is higher compared to copper and aluminum

Engineering Contradiction:
Improvewire weightVSAvoidelectrical conductivity
Core Design Contradiction:
Weight of moving objectVSReliability

Solution Approach 1:

The invention changes the structural parameters of carbon nanotubes by controlling the proportion of two- or three-walled carbon nanotubes to be 75% or more, and optimizing the G+/Gtotal ratio and G/D ratio through doping. These parameter changes reduce resistivity while maintaining the lightweight advantage, resolving the contradiction between weight reduction and electrical conductivity improvement.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention creates a composite structure by doping carbon nanotubes with various elements (iodine, sulfuric acid, nitric acid, etc.) to form doped carbon nanotube aggregates. This composite approach enhances electrical conductivity through doping effects while preserving the low weight characteristic of carbon nanotubes, thereby resolving the contradiction between lightweight and high conductivity.

Inventive Principle:
Principle #40Composite materials

2Reliability

If doping is applied to improve conductivity, then electrical properties improve, but manufacturing complexity increases

Engineering Contradiction:
Improveelectrical conductivityVSAvoiddoping process complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The invention performs doping as a preliminary action during or immediately after carbon nanotube formation. By incorporating dopants into the carbon nanotube structure early in the manufacturing process, the patent simplifies overall production compared to post-processing doping methods, while still achieving the desired electrical conductivity improvement.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If the proportion of two- or three-walled carbon nanotubes is increased to reduce resistivity, then electrical conductivity improves, but manufacturing precision requirements increase

Engineering Contradiction:
Improveelectrical conductivityVSAvoidcarbon nanotube structure control
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The invention establishes specific parameter ranges (75% or more two- or three-walled carbon nanotubes, G+/Gtotal ratio of 0.70 or greater, G/D ratio of 45 or greater) that optimize electrical conductivity. By defining these clear parameter specifications, the patent provides manufacturing targets that balance conductivity improvement with achievable production precision, resolving the contradiction between performance and manufacturability.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The approach achieves significantly lower resistance, comparable to copper and aluminum, thereby improving the electrical characteristics of carbon nanotube aggregates and composite materials, making them viable alternatives for wire applications.

Implementation Method 1

One method to improve conductivity in a carbon nanotube aggregate is to control the network structure (chirality) of carbon nanotubes, which are the component units, and to dope the carbon nanotubes.

Methodology Applied
Scientific EffectDoping: Dopants

Implementation Method 2

a carbon nanotube aggregate, including: a plurality of carbon nanotubes each having one or more walls, wherein a ratio of a total number of carbon nanotubes that have two- or three-walls relative to a number of the carbon nanotubes constituting the carbon nanotube aggregate is 75% or greater, wherein, among peaks due to a G band of a Raman spectrum in Raman spectroscopy, a G+/Gtotal ratio due to semiconductor carbon nanotubes is 0.70 or greater

Methodology Applied
Scientific EffectElectron donation/acceptance:

Implementation Method 3

among peaks due to a G band of a Raman spectrum in Raman spectroscopy, a G+/Gtotal ratio due to semiconductor carbon nanotubes is 0.70 or greater, and wherein a G/D ratio that is defined as a ratio in the Raman spectrum of the G band and a D band due to a crystallinity is 45 or greater

Methodology Applied
Scientific EffectRaman scattering:

Data Source

PatentEP3342752B1Aggregate of carbon nanotubes, carbon nanotube composite material, and carbon nanotube wire
Publication Date: 2024.11.27 FURUKAWA ELECTRIC CO LTD
  • EP3342752B1 patent drawingFigure 1(a)~1(f)
  • EP3342752B1 patent drawingFigure 2
  • EP3342752B1 patent drawingFigure 3(a)~3(b)

AI summary

Provided is a carbon nanotube aggregate by which it is possible to realize further reduction in resistance compared to conventional carbon nanotube wires, as well as realizing comparable resistivity to copper and aluminum, and major improvement in electrical properties. A CNT aggregate (1) is constituted of a plurality of CNT bundles (11) having a structure with one or more walls. The CNT bundles 11 are bundles having a plurality of CNTs (11a). In the CNT aggregate (11), the ratio of the total number of CNTs having a two- or three-walled structure in relation to the number of CNTs (11a) is 75% or greater, and among peaks due to a G band of a Raman spectrum in Raman spectroscopy, a G+/Gtotal ratio due to semiconductor CNTs is 0.70 or greater.