Co-Cr-Pt-Oxide Sputtering Target for Stable Low-Voltage Discharge

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Solution Overview

Problem

Existing Co—Cr—Pt-oxide-based sputtering targets face challenges in stabilizing voltage during sputtering without altering composition or pass through flux, leading to issues like arcing and particle generation.

Innovation Solution

Incorporating a sputtering target with a texture containing 10 or more metal Cr phases of greater than 10 μm and 100 μm or less equivalent circle diameter, dispersed throughout the target, maintains composition and pass through flux while stabilizing voltage and reducing arcing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If oxide particles are made fine and uniformly distributed to suppress abnormal discharge, then discharge stability improves, but voltage remains high requiring high voltage application during sputtering

Engineering Contradiction:
Improvedischarge stabilityVSAvoidsputtering voltage
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent changes the physical state of Cr from oxide form to metallic form, creating metal Cr phases with specific size parameters (10-100 μm equivalent circle diameter). This parameter change in the Cr component's physical state and dimensions enables voltage reduction while preserving discharge stability achieved through the fine oxide distribution.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite structure containing both fine oxide particles (for discharge stability) and metal Cr phases (for voltage reduction). This composite material approach combines the beneficial effects of both components: the fine oxides suppress abnormal discharge while the metal Cr phases reduce the required sputtering voltage.

Inventive Principle:
Principle #40Composite materials

2Reliability

If high voltage is applied during sputtering to achieve sufficient PTF, then magnetic properties are maintained, but voltage instability increases and arcing occurs

Engineering Contradiction:
Improvemagnetic propertiesVSAvoidarcing
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent introduces metal Cr phases with specific size parameters (10-100 μm) to change the electrical and magnetic properties of the sputtering target. This parameter change enables operation at lower voltages while maintaining sufficient PTF and magnetic properties, thereby eliminating arcing caused by high voltage instability.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If oxide content is increased to improve discharge stability, then abnormal discharge is suppressed, but particle generation increases

Engineering Contradiction:
Improvedischarge stabilityVSAvoidparticle generation
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent changes the Cr component from oxide to metallic state and controls its phase distribution with specific size parameters. This parameter change allows the Cr to exist as stable metal phases rather than oxide particles, suppressing particle generation while maintaining discharge stability through the fine oxide distribution in the matrix.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The target effectively lowers sputtering voltage and stabilizes discharge, reducing arcing and particle generation, while maintaining the necessary magnetic properties for magnetic recording media.

Implementation Method 1

a sputtering target suitable for forming a magnetic thin film, in particular, a granular film used as a magnetic recording layer

Methodology Applied
Scientific EffectSputtering: Sputtering

Data Source

PatentUS20250257444A1Co-Cr-Pt-OXIDE-BASED SPUTTERING TARGET
Publication Date: 2025.08.14 TANAKA PRECIOUS METAL TECHNOLOGIES CO LTD
  • US20250257444A1 patent drawing
  • US20250257444A1 patent drawing
  • US20250257444A1 patent drawing

AI summary

A Co—Cr—Pt-oxide-based sputtering target containing 50 at % or more of Co, more than 0 at % and 20 at % or less of Cr, and more than 0 at % and 25 at % or less of Pt, with the balance being one or more oxides and incidental impurities, wherein the sputtering target contains (A) a composite phase in which Co, Pt, and one or more oxides are mutually dispersed and (B) a metal Cr phase; and wherein the sputtering target comprises 10 or more metal Cr phases having an equivalent circle diameter of greater than 10 μm and 100 μm or less in a 1 mm×1 mm field of view under a SEM at a magnification of 50×.