Co-Cr-Pt Sputtering Target Oxide Segmentation
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Solution Overview
Problem
In the production of sputtering targets for magnetic recording media, the aggregation of Ti oxide with metal Cr during sintering leads to the formation of coarse complex oxide grains, resulting in particle generation during sputtering, which is problematic as the floating height of magnetic heads decreases and recording density increases, necessitating stricter particle tolerance.
Innovation Solution
A sputtering target with a structured composition where Ti oxide is dispersed in Co-based regions and other oxides are dispersed in Cr-based regions, preventing the reaction between Ti oxide and metal Cr, and incorporating additional oxides like B, Mg, Al, Si, Cr, Zr, and Ta to enhance oxide dispersibility, with a nonmagnetic oxide content of 20-50% by volume.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If Ti oxide and metal Cr are mixed and sintered together, then the sputtering target can be produced with simpler process, but coarse complex oxide grains form causing particle generation during sputtering
Solution Approach 1:
The sputtering target is divided into distinct regions: Cr-based regions containing Cr and non-Ti oxides, and Co-based regions containing Ti oxide. This spatial segmentation prevents direct contact and reaction between Ti oxide and Cr during sintering, avoiding the formation of coarse complex oxide grains that would generate particles during sputtering.
Solution Approach 2:
Different regions of the sputtering target have different compositional qualities tailored to their specific functions. The Cr-based regions are optimized for Cr-containing oxides while the Co-based regions are optimized for Ti oxide, allowing each region to have the appropriate local composition that prevents harmful reactions while maintaining overall target performance.
2Object-generated harmful factors
If Ti oxide is dispersed in Co-based regions and other oxides in Cr-based regions, then particle generation is reduced, but the target structure becomes more complex
Solution Approach 1:
The target structure is segmented into Cr-based and Co-based regions with distinct oxide distributions. This segmentation, while increasing structural complexity, effectively separates Ti oxide from Cr to prevent particle-generating reactions, achieving the goal of reducing particle generation during sputtering.
3Stability of the object's composition
If oxide content is increased to 20-50% by volume, then oxide dispersibility is enhanced, but the metal matrix composition becomes more limited
Solution Approach 1:
The target employs local quality variation where different metal matrices (Cr-based and Co-based regions) are used in different areas to accommodate the high oxide content requirement. This allows the overall target to have 20-50% oxide content while each local region maintains appropriate metal composition for its specific oxide content and functional requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration inhibits the formation of coarse complex oxide grains, reduces particle generation during sputtering, and improves deposition yield by ensuring oxides are finely dispersed, resulting in a more effective sputtering target for granular film formation.
Implementation Method 1
a structure of the sputtering target is configured from regions where oxides including at least Ti oxide are dispersed in Co (non-Cr-based regions), and a region where oxides other than Ti oxide are dispersed in Cr or Co—Cr (Cr-based region)
Implementation Method 2
a sputtering target for forming a granular film of a magnetic recording medium
Data Source
AI summary
A sputtering target containing, as metal components, 0.5 to 45 mol % of Cr and remainder being Co, and containing, as non-metal components, two or more types of oxides including Ti oxide, wherein a structure of the sputtering target is configured from regions where oxides including at least Ti oxide are dispersed in Co (non-Cr-based regions), and a region where oxides other than Ti oxide are dispersed in Cr or Co—Cr (Cr-based region), and the non-Cr-based regions are scattered in the Cr-based region. An object of this invention is to provide a sputtering target for forming a granular film which suppresses the formation of coarse complex oxide grains and generates fewer particles during sputtering.