Co-Integrated Silicon Photonics and III-V Modulator for LIDAR
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Solution Overview
Problem
Existing LIDAR systems face challenges in achieving high performance and efficiency due to limitations in semiconductor materials and manufacturing processes, particularly in the integration of group III-V semiconductor dies with silicon photonics dies.
Innovation Solution
The integration of co-packaged silicon photonics dies with group III-V semiconductor dies, which includes a substrate with multiple semiconductor stacks for modulators, preamplifiers, and amplifiers, eliminates the need for butt joints, reducing optical loss and manufacturing inefficiencies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If group III-V semiconductor dies are integrated with silicon photonics dies using traditional methods, then manufacturing is achieved, but optical loss increases and manufacturing efficiency decreases
Solution Approach 1:
The patent merges the group III-V semiconductor die and silicon photonics die into a single integrated package with co-packaged channels, eliminating the need for separate butt joints between dies. This integration directly reduces optical loss at interfaces while improving manufacturing efficiency by consolidating multiple components into one unified structure.
Solution Approach 2:
The patent transitions from a planar integration approach to a three-dimensional vertical stacking arrangement where multiple semiconductor stacks are positioned vertically above a substrate. This vertical dimensionality allows multiple functional layers (modulators, preamplifiers, amplifiers) to be integrated without requiring lateral butt joints, thereby reducing optical loss and enhancing manufacturing efficiency.
2Adaptability or versatility
If multiple semiconductor stacks are integrated on a substrate, then device functionality is enhanced, but manufacturing complexity increases
Solution Approach 1:
The patent segments the semiconductor device into distinct functional stacks (modulator stack, preamplifier stack, amplifier stack) positioned vertically above the substrate. Each stack performs a specific function, allowing independent optimization and simplifying the manufacturing process by treating each segment separately while achieving high device functionality through their coordinated operation.
Solution Approach 2:
The substrate serves as a universal platform that supports multiple different semiconductor stacks with varying functions. This multi-functional integration allows a single substrate to accommodate diverse semiconductor components (modulators, preamplifiers, amplifiers), enhancing device functionality while managing manufacturing complexity through a standardized base structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the performance of LIDAR systems by reducing manufacturing costs, increasing efficiency, and improving the ability to generate high-power light signals, thereby enabling more accurate environmental perception and autonomous navigation.
Implementation Method 1
The modulator can be configured to modulate phase and/or frequency of the light source such that the modulated beam can include a phase-modulated beam and/or a frequency-modulated beam
Implementation Method 2
The amplifier is configured to amplify the beam to produce an amplified beam
Implementation Method 3
A LIDAR system includes at least one emitter paired with a receiver to form a channel... each channel emits a laser beam into the environment
Implementation Method 4
a transceiver chip configured to emit the amplified beam at a target and receive a reflected beam from the target
Implementation Method 5
A LIDAR system can determine a distance to the target and/or velocity of the target based on the reflected beam
Data Source
AI summary
A method of forming a photonics integrated circuit (PIC) includes: growing a plurality of first layers on a substrate at a first growth stage, the plurality of first layers corresponding to a first semiconductor device of two or more different semiconductor devices that are respectively configured to receive a beam from a light source and modify one or more features of the beam; etching the substrate to remove an etched portion of the plurality of first layers; and growing a plurality of second layers on the substrate in the etched portion of the first layers at a second growth stage, the plurality of second layers corresponding to a second semiconductor device, wherein a second arrangement of the plurality of second layers differs from a first arrangement of the plurality of first layers.