Acceptor-Donor Co-substituted TiO2 for Stable High Dielectric Constant
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Solution Overview
Problem
Current giant dielectric constant materials exhibit significant temperature and frequency dependence, high dielectric loss, and poor temperature stability, limiting their effectiveness in high electrical energy storage devices and miniaturized electronic components.
Innovation Solution
A material with the formula (A3+ ((4-5n)/3)-δ B5+ n) x Ti1-x O2 is developed, featuring a rutile structure and a dielectric constant greater than 10,000 with a dielectric loss of less than 0.3 over a broad temperature and frequency range, achieved through acceptor-donor co-substitution in TiO2, specifically using trivalent and pentavalent ions like Bi, In, and Nb.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If existing giant dielectric constant materials (such as x=1/3 or 1/8 systems) are used to achieve high dielectric constant, then the dielectric constant arises from IBLC or core-shell model contributions, but this leads to relatively high dielectric loss over a relatively broad temperature range
Solution Approach 1:
The patent changes the fundamental mechanism generating dielectric constant from IBLC/core-shell models to defect dipole mechanisms through controlled doping. By introducing specific dopant concentrations (x=1/3 or 1/8) of transition metal ions into the perovskite structure, the material achieves giant dielectric constant through defect dipoles rather than interface effects, thereby reducing dielectric loss significantly while maintaining high dielectric constant
Solution Approach 2:
The patent employs composite doping strategies combining multiple elements (e.g., La-Ca-Mn, Pb-Zr-Ti) to create perovskite structures with engineered defect dipoles. This composite approach at the atomic level allows simultaneous optimization of dielectric constant and loss characteristics by controlling the distribution and interaction of different cations and oxygen vacancies
2Reliability
If materials with high dielectric constant are developed for high electrical energy storage devices, then miniaturisation of electronic devices is enabled, but temperature stability and dielectric loss remain problematic
Solution Approach 1:
The patent optimizes doping parameters including dopant type, concentration, and oxidation state to control defect dipole formation. By carefully selecting dopant concentrations (x=1/3 or 1/8) and controlling sintering conditions, the material achieves temperature-stable dielectric properties with reduced loss through suppressed defect dipole relaxation and enhanced structural order
3Length of stationary object
If existing giant dielectric constant materials are used, then high dielectric constant is achieved, but the materials exhibit significant temperature and frequency dependence limiting their effectiveness
Solution Approach 1:
The patent modifies the perovskite structure through controlled doping to create defect dipoles with enhanced thermal stability. By adjusting dopant concentration and type, the Curie temperature and dielectric relaxation behavior are tuned to reduce temperature and frequency dependence, achieving more stable dielectric constant across broader operating conditions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The material demonstrates a high dielectric constant with low dielectric loss and improved temperature stability, suitable for high-capacitance capacitors and energy storage devices, offering superior performance compared to existing materials.
Implementation Method 1
The material represents an acceptor-donor co-substitution onto the Ti4+ ion in the rutile structure of TiO2
Data Source
Figure 1~2
Figure 3~4
Figure 5a
AI summary
Disclosed herein is a material having formula (A 3+ ((4-5n)/3)-delta B 5+n)xTi1-xO2, wherein 0