Coating BPSG Film Composition for Substrate Protection
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Solution Overview
Problem
Conventional silicon-containing resist underlayer films cause damage to substrates during patterning processes due to dry etching or hydrofluoric acid peeling solutions, and BPSG films formed by CVD methods generate excessive particles, leading to inefficient processes.
Innovation Solution
A composition for forming a coating type BPSG film comprising silicic acid, phosphoric acid, and boric acid structures, along with specific silicon, phosphorus, and boron compounds, which enhances adhesiveness, allows for easy wet etching without substrate damage, and suppresses particle generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional silicon-containing resist underlayer films are used in patterning processes, then the resist underlayer film can be formed, but the substrate is damaged during dry etching or hydrofluoric acid peeling
Solution Approach 1:
The patent changes the chemical composition parameters of the resist underlayer film by incorporating specific boron compounds (B(C6H5)3, B(C6H4Me)3) in controlled amounts (0.1-10% by mass relative to silicon compound). This compositional modification enables the film to resist damage from both dry etching and hydrofluoric acid peeling while maintaining its function as an underlayer
Solution Approach 2:
The patent creates a composite resist underlayer film material combining silicon compounds (for film formation), boron compounds (for damage resistance), and optional phosphorus compounds. This composite structure provides synergistic effects where the boron component protects the substrate during etching and peeling processes while the silicon component ensures proper film formation and pattern adhesion
2Productivity
If BPSG films are formed by CVD methods, then the film can be deposited, but excessive particles are generated leading to inefficient processes
Solution Approach 1:
The patent replaces the CVD (chemical vapor deposition) method with a coating method. Instead of using vapor-phase chemical reactions that generate particles, the invention applies a liquid or paste composition containing silicon, phosphorus, and boron compounds directly to the substrate and cures it. This substitution eliminates the particle generation problem inherent in CVD processes while maintaining BPSG film formation
Solution Approach 2:
The patent changes the deposition method parameter from CVD to coating, and modifies the chemical composition to include specific ratios of silicon, phosphorus, and boron compounds. This parameter change transforms the process from a particle-generating vapor deposition to a controlled coating and curing process that produces minimal particles
3Manufacturing precision
If conventional resist underlayer films are used, then the patterning process can proceed, but adhesiveness in fine patterns is insufficient
Solution Approach 1:
The patent modifies the compositional parameters by incorporating phosphorus compounds (such as (C6H5)2P(OC6H5)2, (C6H5)2P(OH)2) in controlled amounts (0.1-10% by mass relative to silicon compound). This compositional adjustment enhances the chemical bonding capability of the resist underlayer film, improving adhesiveness to both the substrate and the photoresist pattern, particularly in fine pattern dimensions
Solution Approach 2:
The patent creates a composite resist underlayer film containing silicon compounds (for structural basis), phosphorus compounds (for adhesion enhancement), and boron compounds (for process compatibility). This composite material provides multi-functional properties including improved pattern adhesiveness, substrate protection, and process efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition provides excellent adhesiveness and etching properties, preventing substrate damage during wet etching and reducing particle formation, thus improving the efficiency of the patterning process.
Implementation Method 1
one or more silicon compounds represented by general formulae (A-1-1) to (A-1-4), and both of one or more phosphorus compounds represented by general formulae (A-2-1) to (A-2-6) and one or more boron compounds represented by general formulae (A-3-1) to (A-3-3), each singly or in any combination of two or more, are subjected to hydrolysis, condensation, or hydrolysis condensation
Implementation Method 2
one or more silicon compounds represented by general formulae (A-1-1) to (A-1-4), and both of one or more phosphorus compounds represented by general formulae (A-2-1) to (A-2-6) and one or more boron compounds represented by general formulae (A-3-1) to (A-3-3), each singly or in any combination of two or more, are subjected to hydrolysis, condensation, or hydrolysis condensation
Data Source
AI summary
The present invention provides a composition for forming a coating type BPSG film, which comprises: one or more structures comprising a silicic acid represented by the following general formula (1) as a skeletal structure, one or more structures comprising a phosphoric acid represented by the following general formula (2) as a skeletal structure and one or more structures comprising a boric acid represented by the following general formula (3) as a skeletal structure. There can be provided a composition for forming a coating type BPSG film which is excellent in adhesiveness in fine pattern, can be easily wet etched by a peeling solution which does not cause any damage to the semiconductor apparatus substrate, the coating type organic film or the CVD film mainly comprising carbon which are necessary in the patterning process, and can suppress generation of particles by forming it in the coating process.