Coaxial Semiconductor Testing Probe Design
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Solution Overview
Problem
Conventional semiconductor testing probes and gold-fingers face challenges with low manufacturing accuracy, structural strength, short lifespan, and low testing accuracy due to miniaturization, leading to issues with voltage drop and probe dislodgment during electrical testing.
Innovation Solution
A coaxial testing probe design featuring a first testing tip surrounded by a second testing tip with an insulation layer, enhancing mechanical strength and accuracy while maintaining a constant distance, and a semiconductor testing fixture with integrated probes on a substrate for improved testing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the size of top-probes and gold-fingers is reduced to match miniaturized semiconductor terminals, then the testing capability for small devices is improved, but the mechanical strength and structural stability deteriorate
Solution Approach 1:
The patent implements a nested coaxial structure where the first testing tip is positioned inside the second testing tip, forming a concentric arrangement. This nesting allows both probes to be integrated within a compact footprint while maintaining adequate mechanical strength through the outer probe's structural support, resolving the contradiction between miniaturization adaptability and mechanical strength.
Solution Approach 2:
The patent transitions from a planar side-by-side probe arrangement to a three-dimensional coaxial configuration. By utilizing the vertical dimension and creating a concentric structure, the design achieves better space utilization for miniaturized devices while the outer probe provides structural reinforcement, simultaneously improving adaptability to small devices and maintaining mechanical strength.
2Measurement precision
If the distance between two parallel probes is reduced to improve testing accuracy, then the measurement precision is improved, but the probes become prone to spinning out due to torque force
Solution Approach 1:
The coaxial nesting arrangement positions the first testing tip centrally within the second testing tip, creating a symmetric configuration that balances torque forces during testing. This geometric arrangement prevents the probes from spinning out while maintaining precise positioning, thereby improving both measurement precision and reliability simultaneously.
Solution Approach 2:
The symmetric coaxial arrangement creates a balanced force distribution where torque forces act equidistantly on both probes. This equipotential-like symmetry in force distribution prevents rotational instability and probe dislodgment, ensuring reliable testing while maintaining accurate measurements.
3Measurement precision
If the resistance of top-probes is reduced to minimize voltage drop, then the testing accuracy for large currents is improved, but the probe dimensions must be increased which conflicts with miniaturization
Solution Approach 1:
The patent merges two probe structures into a single coaxial assembly where the first and second testing tips work together. This combination effectively doubles the conductive path cross-section, reducing overall resistance and voltage drop without increasing the external footprint, thus improving current testing accuracy while maintaining miniaturization.
Solution Approach 2:
The nested coaxial structure allows the inner probe to be surrounded by the outer probe, creating a composite conductor with higher effective cross-sectional area. This reduces resistance and voltage drop for large current measurements while the compact nested arrangement maintains small overall dimensions, resolving the contradiction between low resistance and miniaturization.
Data Source
AI summary
A testing probe is provided. The testing probe includes a first testing tip; an insulation layer formed on a side surface of the first testing tip; and a second testing tip being coaxial with the first testing tip and surrounding the first testing tip formed on a side surface of the insulation layer.