Post-CMP Cobalt Cleaning Composition Without Fluoride Abrasives
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Solution Overview
Problem
Current compositions for cleaning microelectronic devices struggle to effectively remove post-CMP, post-etch, and post-ash residues without damaging cobalt-containing materials, and often contain harmful components like fluoride and abrasive materials.
Innovation Solution
A cleaning composition comprising a complexing agent, cleaning additive, pH adjusting agent, oxylamine compound, and optionally etchant or corrosion inhibitor, devoid of fluoride-containing sources and abrasive materials, specifically designed to remove residues from cobalt-containing substrates without corroding them.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional cleaning compositions containing fluoride and abrasive materials are used, then cleaning effectiveness is improved, but cobalt substrate damage increases
Solution Approach 1:
The patent removes harmful fluoride-containing sources and abrasive materials from the cleaning composition formulation, extracting only the necessary cleaning agents that are effective against residues but compatible with cobalt substrates
Solution Approach 2:
The patent changes the chemical parameters of the cleaning composition by using oxylamine compounds and specific complexing agents with controlled pH levels, creating a chemistry that selectively removes residues without attacking cobalt metal
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves improved cobalt compatibility and efficient removal of residues, with at least 75% of contaminants being removed, reducing the risk of damage to cobalt surfaces and maintaining the integrity of microelectronic devices.
Implementation Method 1
comprising at least one complexing agent, at least one cleaning additive, at least one pH adjusting agent, water, and at least one oxylamine compound or salt thereof
Implementation Method 2
comprising at least one complexing agent, at least one cleaning additive, at least one pH adjusting agent, water, and at least one oxylamine compound or salt thereof
Data Source
AI summary
A cleaning composition is disclosed for cleaning residue and/or contaminants from microelectronic devices having same thereon. The composition comprises at least one complexing agent, at least one cleaning additive, at least one pH adjusting agent, water, and at least one oxylamine compound. Advantageously, the compositions show effective cleaning of cobalt-containing substrates and improved cobalt compatibility.